ME50N06T-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ME50N06T-G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 136 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 53 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 38 nC
Tiempo de subida (tr): 5 nS
Conductancia de drenaje-sustrato (Cd): 197 pF
Resistencia entre drenaje y fuente RDS(on): 0.022 Ohm
Paquete / Cubierta: TO-220
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ME50N06T-G Datasheet (PDF)
me50n06t me50n06t-g.pdf
ME50N06T/ME50N06T-GN-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)22m@VGS=10V The ME50N06T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high densit
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ME50N06A/ME50N06A-G N- Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME50N06A is the N-Channel logic enhancement mode power RDS(ON)22m@VGS=10V field effect transistors are produced using high cell density DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to Exceptional on-resi
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ME50N02 / ME50N02-G N- Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)8m@VGS=10V The ME50N02 is the N-Channel logic enhancement mode power RDS(ON)9m@VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)12m@VGS=2.5V trench technology. This high density process is especially tailored to Super high den
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ME50N75T/ME50N75T-GN-Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)26m@VGS=10V The ME50N75T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high densit
me50n10 me50n10-g.pdf
ME50N10 / ME50N10-G N- Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)17m@VGS=10V The ME50N10 is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high densi
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