Справочник MOSFET. ME50N06T-G

 

ME50N06T-G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ME50N06T-G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 136 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 53 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 38 nC
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 197 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.022 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для ME50N06T-G

 

 

ME50N06T-G Datasheet (PDF)

 ..1. Size:1138K  matsuki electric
 me50n06t me50n06t-g.pdf

ME50N06T-G ME50N06T-G

ME50N06T/ME50N06T-GN-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)22m@VGS=10V The ME50N06T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high densit

 7.1. Size:1310K  matsuki electric
 me50n06a me50n06a-g.pdf

ME50N06T-G ME50N06T-G

ME50N06A/ME50N06A-G N- Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME50N06A is the N-Channel logic enhancement mode power RDS(ON)22m@VGS=10V field effect transistors are produced using high cell density DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to Exceptional on-resi

 8.1. Size:1050K  matsuki electric
 me50n02 me50n02-g.pdf

ME50N06T-G ME50N06T-G

ME50N02 / ME50N02-G N- Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)8m@VGS=10V The ME50N02 is the N-Channel logic enhancement mode power RDS(ON)9m@VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)12m@VGS=2.5V trench technology. This high density process is especially tailored to Super high den

 9.1. Size:1250K  matsuki electric
 me50n75t me50n75t-g.pdf

ME50N06T-G ME50N06T-G

ME50N75T/ME50N75T-GN-Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)26m@VGS=10V The ME50N75T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high densit

 9.2. Size:1266K  matsuki electric
 me50n10 me50n10-g.pdf

ME50N06T-G ME50N06T-G

ME50N10 / ME50N10-G N- Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)17m@VGS=10V The ME50N10 is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high densi

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top