ME80N08A-G Todos los transistores

 

ME80N08A-G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ME80N08A-G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 194 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 43 nS

Cossⓘ - Capacitancia de salida: 1150 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm

Encapsulados: TO-220

 Búsqueda de reemplazo de ME80N08A-G MOSFET

- Selecciónⓘ de transistores por parámetros

 

ME80N08A-G datasheet

 ..1. Size:1244K  matsuki electric
 me80n08a me80n08a-g.pdf pdf_icon

ME80N08A-G

ME80N08A/ME80N08A-G N-Channel 80V(D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 5m @VGS=10V The ME80N08A is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high density p

 6.1. Size:871K  matsuki electric
 me80n08ah me80n08ah-g.pdf pdf_icon

ME80N08A-G

ME80N08AH/ME80N08AH-G 80V N-Channel Enhancement Mode GENERAL DESCRIPTION FEATURES RDS(ON) 5m @VGS=10V The ME80N08AH is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high

 6.2. Size:1055K  matsuki electric
 me80n08af me80n08af-g.pdf pdf_icon

ME80N08A-G

ME80N08AF/ME80N08AF-G N-Channel 80V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 5m @VGS=10V The ME80N08AF is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high densi

 9.1. Size:1006K  1
 me80n75f me80n75fg.pdf pdf_icon

ME80N08A-G

ME80N75F / ME80N75F-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 10m @VGS=10V The ME80N75F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den

MOSTRAR MÁS

Otros transistores... ME6968ED , ME6968ED-G , ME6980ED , ME6980ED-G , ME7114S-G , ME7804S-G , ME7839S-G , ME80N08A , 5N65 , ME80N75F-G , ME80N75T , ME80N75T-G , ME8107 , ME8107-G , ME8205E , ME8205E-G , ME85P03 .

History: JMSL0315AP | IAUC120N04S6N013 | 2SK3078A | IAUC60N04S6N044 | MEE4294K-G | IAUC120N04S6L009

 

 

 

 

↑ Back to Top
.