Справочник MOSFET. ME80N08A-G

 

ME80N08A-G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ME80N08A-G
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 300 W
   Предельно допустимое напряжение сток-исток |Uds|: 80 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 194 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 221 nC
   Время нарастания (tr): 43 ns
   Выходная емкость (Cd): 1150 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.005 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для ME80N08A-G

 

 

ME80N08A-G Datasheet (PDF)

 ..1. Size:1244K  matsuki electric
me80n08a me80n08a-g.pdf

ME80N08A-G
ME80N08A-G

ME80N08A/ME80N08A-G N-Channel 80V(D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)5m@VGS=10V The ME80N08A is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high density p

 6.1. Size:871K  matsuki electric
me80n08ah me80n08ah-g.pdf

ME80N08A-G
ME80N08A-G

ME80N08AH/ME80N08AH-G 80V N-Channel Enhancement Mode GENERAL DESCRIPTION FEATURES RDS(ON)5m@VGS=10V The ME80N08AH is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high

 6.2. Size:1055K  matsuki electric
me80n08af me80n08af-g.pdf

ME80N08A-G
ME80N08A-G

ME80N08AF/ME80N08AF-G N-Channel 80V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)5m@VGS=10V The ME80N08AF is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high densi

 9.1. Size:1006K  1
me80n75f me80n75fg.pdf

ME80N08A-G
ME80N08A-G

ME80N75F / ME80N75F-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)10m@VGS=10V The ME80N75F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den

 9.2. Size:1150K  matsuki electric
me80n75f me80n75f-g.pdf

ME80N08A-G
ME80N08A-G

ME80N75F / ME80N75F-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)10m@VGS=10V The ME80N75F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den

 9.3. Size:1190K  matsuki electric
me80n75t me80n75t-g.pdf

ME80N08A-G
ME80N08A-G

ME80N75T / ME80N75T-GN- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)10m@VGS=10V The ME80N75T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den

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