ME8205E-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ME8205E-G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 441 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: SOT-26

Búsqueda de reemplazo de MOSFET ME8205E-G

ME8205E-G Datasheet (PDF)

..1. Size:1053K matsuki electric
me8205e me8205e-g.pdf

ME8205E/ME8205E-G Dual N-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME8205E is the Dual N-Channel logic enhancement mode RDS(ON)22m@VGS=4.5V power field effect transistor, produced using high cell density DMOS RDS(ON)23m@VGS=4.0V trench technology. This high density process is especially tailored to RDS(ON)26m@VGS=3.0V minimize on-state r

8.1. Size:1302K matsuki electric
me8205b me8205b-g.pdf

ME8205B/ME8205B-G N-Channel 20V(D-S) MOSFET FEATURES GENERAL DESCRIPTION RDS(ON) 30 m@VGS=4.5V The ME8205B-G is the N-Channel logic enhancement mode power RDS(ON) 35m@VGS=2.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especi

9.1. Size:256K fairchild semi
fdme820nzt.pdf

October 2013FDME820NZTN-Channel PowerTrench MOSFET 20 V, 9 A, 18 mFeatures General Description Max rDS(on) = 18 m at VGS = 4.5 V, ID = 9 AThis Single N-Channel MOSFET has been designed usingFairchild Semiconductors advanced Power Trench process to Max rDS(on) = 24 m at VGS = 2.5 V, ID = 7.5 Aoptimize the rDS(ON) @ VGS = 1.8 V on special MicroFET Max rDS(on) = 32 m

9.2. Size:723K onsemi
fdme820nzt.pdf

FDME820NZTN-Channel PowerTrench MOSFETGeneral Description20 V, 9 A, 18 mThis Single N-Channel MOSFET has been designed using FeaturesON Semiconductors advanced Power Trench process to Max rDS(on) = 18 m at VGS = 4.5 V, ID = 9 Aoptimize the rDS(ON) @ VGS = 1.8 V on special MicroFET Max rDS(on) = 24 m at VGS = 2.5 V, ID = 7.5 A leadframe. Max rDS(on) = 32 m at VG

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History: NCE65N230F

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