All MOSFET. ME8205E-G Datasheet

 

ME8205E-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME8205E-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21.9 nC
   trⓘ - Rise Time: 441 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SOT-26

 ME8205E-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME8205E-G Datasheet (PDF)

 ..1. Size:1053K  matsuki electric
 me8205e me8205e-g.pdf

ME8205E-G ME8205E-G

ME8205E/ME8205E-G Dual N-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME8205E is the Dual N-Channel logic enhancement mode RDS(ON)22m@VGS=4.5V power field effect transistor, produced using high cell density DMOS RDS(ON)23m@VGS=4.0V trench technology. This high density process is especially tailored to RDS(ON)26m@VGS=3.0V minimize on-state r

 8.1. Size:1302K  matsuki electric
 me8205b me8205b-g.pdf

ME8205E-G ME8205E-G

ME8205B/ME8205B-G N-Channel 20V(D-S) MOSFET FEATURES GENERAL DESCRIPTION RDS(ON) 30 m@VGS=4.5V The ME8205B-G is the N-Channel logic enhancement mode power RDS(ON) 35m@VGS=2.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especi

 9.1. Size:256K  fairchild semi
 fdme820nzt.pdf

ME8205E-G ME8205E-G

October 2013FDME820NZTN-Channel PowerTrench MOSFET 20 V, 9 A, 18 mFeatures General Description Max rDS(on) = 18 m at VGS = 4.5 V, ID = 9 AThis Single N-Channel MOSFET has been designed usingFairchild Semiconductors advanced Power Trench process to Max rDS(on) = 24 m at VGS = 2.5 V, ID = 7.5 Aoptimize the rDS(ON) @ VGS = 1.8 V on special MicroFET Max rDS(on) = 32 m

 9.2. Size:723K  onsemi
 fdme820nzt.pdf

ME8205E-G ME8205E-G

FDME820NZTN-Channel PowerTrench MOSFETGeneral Description20 V, 9 A, 18 mThis Single N-Channel MOSFET has been designed using FeaturesON Semiconductors advanced Power Trench process to Max rDS(on) = 18 m at VGS = 4.5 V, ID = 9 Aoptimize the rDS(ON) @ VGS = 1.8 V on special MicroFET Max rDS(on) = 24 m at VGS = 2.5 V, ID = 7.5 A leadframe. Max rDS(on) = 32 m at VG

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: P0660AT | STN3N45K3 | MTB40P06V8

 

 
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