ME9435A-G Todos los transistores

 

ME9435A-G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ME9435A-G

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: SOP-8

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ME9435A-G datasheet

 ..1. Size:1289K  matsuki electric
 me9435a me9435a-g.pdf pdf_icon

ME9435A-G

ME9435A/ME9435A-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 40m @VGS=-10V The ME9435A is the P-Channel logic enhancement mode power field RDS(ON) 60m @VGS=-4.5V effect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to m

 7.1. Size:1229K  matsuki electric
 me9435as me9435as-g.pdf pdf_icon

ME9435A-G

ME9435AS/ ME9435AS-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 45m @VGS=-10V The ME9435AS is the P-Channel logic enhancement mode power RDS(ON) 60m @VGS=-4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored t

 8.1. Size:1173K  matsuki electric
 me9435 me9435-g.pdf pdf_icon

ME9435A-G

ME9435/ ME9435-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 60m @VGS=-10V The ME9435 is the P-Channel logic enhancement mode power field RDS(ON) 90m @VGS=-4.5V effect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to mini

 8.2. Size:838K  cn vbsemi
 me9435.pdf pdf_icon

ME9435A-G

ME9435 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top Vi

MOSTRAR MÁS

Otros transistores... ME8205E-G , ME85P03 , ME85P03-G , ME90N03 , ME90N03-G , ME9435 , ME9435-G , ME9435A , IRF1407 , ME95N03 , ME95N03-G , ME95N03T , ME95N03T-G , MEE15N10-G , MEE3710-G , MEE4294-G , MESS84 .

History: SVD50N06D | 2SK1562 | MS5N100FE | HU50N06D | ASDM3020 | HD70N08 | ST3400SRG

 

 

 

 

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