ME9435A-G Datasheet and Replacement. Cross Reference Search

ME9435A-G Datasheet (PDF)

..1. Size:1289K matsuki electric
me9435a me9435a-g.pdf pdf_icon

ME9435A/ME9435A-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)40m@VGS=-10V The ME9435A is the P-Channel logic enhancement mode power field RDS(ON)60m@VGS=-4.5V effect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to m

7.1. Size:1229K matsuki electric
me9435as me9435as-g.pdf pdf_icon

ME9435AS/ ME9435AS-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)45m@VGS=-10V The ME9435AS is the P-Channel logic enhancement mode power RDS(ON)60m@VGS=-4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored t

8.1. Size:1173K matsuki electric
me9435 me9435-g.pdf pdf_icon

ME9435/ ME9435-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)60m@VGS=-10V The ME9435 is the P-Channel logic enhancement mode power field RDS(ON)90m@VGS=-4.5V effect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to mini

8.2. Size:838K cn vbsemi
me9435.pdf pdf_icon

ME9435www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop Vi

Datasheet: ME8205E-G , ME85P03 , ME85P03-G , ME90N03 , ME90N03-G , ME9435 , ME9435-G , ME9435A , P0903BDG , ME95N03 , ME95N03-G , ME95N03T , ME95N03T-G , MEE15N10-G , MEE3710-G , MEE4294-G , MESS84 .