All MOSFET. ME9435A-G Datasheet

 

ME9435A-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME9435A-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 6.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SOP-8

 ME9435A-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME9435A-G Datasheet (PDF)

 ..1. Size:1289K  matsuki electric
me9435a me9435a-g.pdf

ME9435A-G
ME9435A-G

ME9435A/ME9435A-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)40m@VGS=-10V The ME9435A is the P-Channel logic enhancement mode power field RDS(ON)60m@VGS=-4.5V effect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to m

 7.1. Size:1229K  matsuki electric
me9435as me9435as-g.pdf

ME9435A-G
ME9435A-G

ME9435AS/ ME9435AS-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)45m@VGS=-10V The ME9435AS is the P-Channel logic enhancement mode power RDS(ON)60m@VGS=-4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored t

 8.1. Size:1173K  matsuki electric
me9435 me9435-g.pdf

ME9435A-G
ME9435A-G

ME9435/ ME9435-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)60m@VGS=-10V The ME9435 is the P-Channel logic enhancement mode power field RDS(ON)90m@VGS=-4.5V effect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to mini

 8.2. Size:838K  cn vbsemi
me9435.pdf

ME9435A-G
ME9435A-G

ME9435www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop Vi

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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