ME9435A-G MOSFET Datasheet: P-Ch, 30V, 6.3A. Full specification with pinout and replacement list

ME9435A-G Specs and Replacement

Type Designator: ME9435A-G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SOP-8

ME9435A-G substitution

- MOSFET ⓘ Cross-Reference Search

ME9435A-G datasheet

..1. Size:1289K matsuki electric
me9435a me9435a-g.pdf pdf_icon

ME9435A/ME9435A-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 40m @VGS=-10V The ME9435A is the P-Channel logic enhancement mode power field RDS(ON) 60m @VGS=-4.5V effect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to m... See More ⇒

7.1. Size:1229K matsuki electric
me9435as me9435as-g.pdf pdf_icon

ME9435AS/ ME9435AS-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 45m @VGS=-10V The ME9435AS is the P-Channel logic enhancement mode power RDS(ON) 60m @VGS=-4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored t... See More ⇒

8.1. Size:1173K matsuki electric
me9435 me9435-g.pdf pdf_icon

ME9435/ ME9435-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 60m @VGS=-10V The ME9435 is the P-Channel logic enhancement mode power field RDS(ON) 90m @VGS=-4.5V effect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to mini... See More ⇒

8.2. Size:838K cn vbsemi
me9435.pdf pdf_icon

ME9435 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top Vi... See More ⇒

Detailed specifications: ME8205E-G, ME85P03, ME85P03-G, ME90N03, ME90N03-G, ME9435, ME9435-G, ME9435A, IRF1407, ME95N03, ME95N03-G, ME95N03T, ME95N03T-G, MEE15N10-G, MEE3710-G, MEE4294-G, MESS84