JCS10N60BT Todos los transistores

 

JCS10N60BT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: JCS10N60BT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 178 W
   Voltaje máximo drenador - fuente |Vds|: 600 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 9.5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
   Carga de la puerta (Qg): 37.2 nC
   Tiempo de subida (tr): 121 nS
   Conductancia de drenaje-sustrato (Cd): 167 pF
   Resistencia entre drenaje y fuente RDS(on): 0.75 Ohm
   Paquete / Cubierta: TO-262

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JCS10N60BT Datasheet (PDF)

 ..1. Size:1843K  jilin sino
jcs10n60bt jcs10n60st jcs10n60ct jcs10n60ft.pdf

JCS10N60BT
JCS10N60BT

N RN-CHANNEL MOSFET JCS10N60T Package MAIN CHARACTERISTICS ID 9.5 A VDSS 600 V Rdson 0.75 @Vgs=10VQg 37.2 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

 6.1. Size:1369K  jilin sino
jcs10n60f jcs10n60c.pdf

JCS10N60BT
JCS10N60BT

R JCS10N60C JCS10N60C MAIN CHARACTERISTICS Package ID 10 A VDSS 600 V Rdson-max 0.85 Vgs=10V Qg-Typ 51.5 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplies FEATURES

 7.1. Size:830K  jilin sino
jcs10n65f.pdf

JCS10N60BT
JCS10N60BT

R JCS10N65FC JCS10N65FC Package MAIN CHARACTERISTICS ID 10 A 650 V VDSS 1.0 Rdson-max@Vgs=10V Qg-Typ 54 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplies FEATURES

 7.2. Size:1484K  jilin sino
jcs10n65bt jcs10n65st jcs10n65ct jcs10n65ft.pdf

JCS10N60BT
JCS10N60BT

N RN-CHANNEL MOSFET JCS10N65T MAIN CHARACTERISTICS Package ID 9.5 A VDSS 650 V Rdson-max 0.95 @Vgs=10V Qg-typ 34 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURE

 7.3. Size:536K  jilin sino
ajcs10n65ct.pdf

JCS10N60BT
JCS10N60BT

N RN-CHANNEL MOSFET AJCS10N65CT MAIN CHARACTERISTICS Package ID 10A VDSS 650V Rdson-max 0.95 @Vgs=10V Qg-typ 34 nC APPLICATIONS Electronic ballast UPS UPS Automotive applications High frequency switching

 7.4. Size:741K  jilin sino
jcs10n65f jcs10n65c jcs10n65b jcs10n65s.pdf

JCS10N60BT
JCS10N60BT

N R N-CHANNEL MOSFET JCS10N65EI Package MAIN CHARACTERISTICS ID 10 A VDSS 650 V Rdson-max0.85 Vgs=10V Qg-Typ 30 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STI18N65M2

 

 
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History: STI18N65M2

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