All MOSFET. JCS10N60BT Datasheet

 

JCS10N60BT MOSFET. Datasheet pdf. Equivalent


   Type Designator: JCS10N60BT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 178 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 9.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 37.2 nC
   trⓘ - Rise Time: 121 nS
   Cossⓘ - Output Capacitance: 167 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO-262

 JCS10N60BT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JCS10N60BT Datasheet (PDF)

 ..1. Size:1843K  jilin sino
 jcs10n60bt jcs10n60st jcs10n60ct jcs10n60ft.pdf

JCS10N60BT JCS10N60BT

N RN-CHANNEL MOSFET JCS10N60T Package MAIN CHARACTERISTICS ID 9.5 A VDSS 600 V Rdson 0.75 @Vgs=10VQg 37.2 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

 6.1. Size:1369K  jilin sino
 jcs10n60f jcs10n60c.pdf

JCS10N60BT JCS10N60BT

R JCS10N60C JCS10N60C MAIN CHARACTERISTICS Package ID 10 A VDSS 600 V Rdson-max 0.85 Vgs=10V Qg-Typ 51.5 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplies FEATURES

 7.1. Size:830K  jilin sino
 jcs10n65f.pdf

JCS10N60BT JCS10N60BT

R JCS10N65FC JCS10N65FC Package MAIN CHARACTERISTICS ID 10 A 650 V VDSS 1.0 Rdson-max@Vgs=10V Qg-Typ 54 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplies FEATURES

 7.2. Size:1484K  jilin sino
 jcs10n65bt jcs10n65st jcs10n65ct jcs10n65ft.pdf

JCS10N60BT JCS10N60BT

N RN-CHANNEL MOSFET JCS10N65T MAIN CHARACTERISTICS Package ID 9.5 A VDSS 650 V Rdson-max 0.95 @Vgs=10V Qg-typ 34 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURE

 7.3. Size:536K  jilin sino
 ajcs10n65ct.pdf

JCS10N60BT JCS10N60BT

N RN-CHANNEL MOSFET AJCS10N65CT MAIN CHARACTERISTICS Package ID 10A VDSS 650V Rdson-max 0.95 @Vgs=10V Qg-typ 34 nC APPLICATIONS Electronic ballast UPS UPS Automotive applications High frequency switching

 7.4. Size:741K  jilin sino
 jcs10n65f jcs10n65c jcs10n65b jcs10n65s.pdf

JCS10N60BT JCS10N60BT

N R N-CHANNEL MOSFET JCS10N65EI Package MAIN CHARACTERISTICS ID 10 A VDSS 650 V Rdson-max0.85 Vgs=10V Qg-Typ 30 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FQPF8N60C

 

 
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