JCS10N60BT MOSFET Datasheet: N-Ch, 600V, 9.5A. Full specification with pinout and replacement list

JCS10N60BT Specs and Replacement

Type Designator: JCS10N60BT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 178 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 121 nS

Cossⓘ - Output Capacitance: 167 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO-262

JCS10N60BT substitution

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JCS10N60BT datasheet

..1. Size:1843K jilin sino
jcs10n60bt jcs10n60st jcs10n60ct jcs10n60ft.pdf pdf_icon

N R N-CHANNEL MOSFET JCS10N60T Package MAIN CHARACTERISTICS ID 9.5 A VDSS 600 V Rdson 0.75 @Vgs=10V Qg 37.2 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS ... See More ⇒

6.1. Size:1369K jilin sino
jcs10n60f jcs10n60c.pdf pdf_icon

R JCS10N60C JCS10N60C MAIN CHARACTERISTICS Package ID 10 A VDSS 600 V Rdson-max 0.85 Vgs=10V Qg-Typ 51.5 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplies FEATURES ... See More ⇒

7.1. Size:830K jilin sino
jcs10n65f.pdf pdf_icon

... See More ⇒

7.2. Size:1484K jilin sino
jcs10n65bt jcs10n65st jcs10n65ct jcs10n65ft.pdf pdf_icon

N R N-CHANNEL MOSFET JCS10N65T MAIN CHARACTERISTICS Package ID 9.5 A VDSS 650 V Rdson-max 0.95 @Vgs=10V Qg-typ 34 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURE... See More ⇒