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KIA50N03BD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KIA50N03BD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0099 Ohm
   Paquete / Cubierta: TO252

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KIA50N03BD Datasheet (PDF)

 ..1. Size:123K  kia
kia50n03bd.pdf

KIA50N03BD
KIA50N03BD

50A30VN-CHANNELMOSFETKIA50N03BKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features Advanced trenchprocess technology High density cell design for ultra lowon-resistance Fully characterized avalanche voltage and current2. Features 50A, 30V, R (on) typ. =6.5m(typ.)@V =10 VDS GSLowgate charge LowCrss Fast switching Improveddv/dt capability3. Pinc

 6.1. Size:6996K  kia
kia50n03.pdf

KIA50N03BD
KIA50N03BD

50 Amps, 30 Volts N-CHANNEL MOSFET 50N03 KIA KIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Features Advanced trench process technology High density cell design for ultra low on-resistance Fully characterized avalanche voltage and current 2.Applications VDSS=30V,RDS(on)=6.5m,ID=50A Vds=30V RDS(ON)=6.5m(Max.),VGS@10V,Ids@30A RDS(

 7.1. Size:1126K  1
kia50n06.pdf

KIA50N03BD
KIA50N03BD

KIA50N06PbKIA50N06Pb Free Plating Product50A,60V Heatsink Planar N-Channel Power MOSFETFeatures2. Drain 50A, 60V, RDS(on) = 0.022 @VGS = 10 VBVDSS = 60V Low gate charge ( typical 31 nC) Low Crss ( typical 65 pF)RDS(ON) = 0.022 ohm Fast switching 1. Gate 100% avalanche testedID = 50A

 7.2. Size:394K  kia
kia50n06b.pdf

KIA50N03BD
KIA50N03BD

50A60V50N06BN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =10.5m@ V =10VDS(on) GS Lead free and green device available Low Rds-on to minimize conductive loss High avalanche current2. Applications Power supply UPS Battery management system3.SymbolPin Function1 Gate2 Drain3 Source4 Drain1of 6 Rev 1.1JAN2014

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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