JCS2N60VB Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: JCS2N60VB

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 43.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 1.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 132 nS

Cossⓘ - Capacitancia de salida: 37.4 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.5 Ohm

Encapsulados: TO251

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JCS2N60VB datasheet

 ..1. Size:924K  jilin sino
 jcs2n60vb jcs2n60rb jcs2n60cb jcs2n60fb jcs2n60mb jcs2n60mfb.pdf pdf_icon

JCS2N60VB

N R N-CHANNEL MOSFET JCS2N60B MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson Vgs=10V 4.5 -MAX Qg-TYP 5.9nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

 6.1. Size:1813K  jilin sino
 jcs2n60t jcs2n60v jcs2n60r jcs2n60c jcs2n60f.pdf pdf_icon

JCS2N60VB

R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max 5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS l High efficiency switch l mode power supplies l l Electronic lamp ballasts l LED based on half bridge l LED power supplie FEATURES l Low gate c

 6.2. Size:1742K  jilin sino
 jcs2n60t jcs2n60mf jcs2n60v jcs2n60r jcs2n60c jcs2n60f.pdf pdf_icon

JCS2N60VB

R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max 5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplie FEATURES

 6.3. Size:975K  jilin sino
 jcs2n60t jcs2n60mf jcs2n60v jcs2n60r jcs2n60n jcs2n60c jcs2n60f.pdf pdf_icon

JCS2N60VB

MOSTRAR MÁS

Otros transistores... JCS20N65WH, JCS2N60CB, JCS2N60FB, JCS2N60MB, JCS2N60MF, JCS2N60MFB, JCS2N60RB, JCS2N60T, IRF9640, JCS2N65C, JCS2N65CB, JCS2N65F, JCS2N65FB, JCS2N65MB, JCS2N65MFB, JCS2N65R, JCS2N65RB