JCS2N60VB Todos los transistores

 

JCS2N60VB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: JCS2N60VB
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 43.6 W
   Voltaje máximo drenador - fuente |Vds|: 600 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 1.9 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 5.9 nC
   Tiempo de subida (tr): 132 nS
   Conductancia de drenaje-sustrato (Cd): 37.4 pF
   Resistencia entre drenaje y fuente RDS(on): 4.5 Ohm
   Paquete / Cubierta: TO251

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JCS2N60VB Datasheet (PDF)

 ..1. Size:924K  jilin sino
jcs2n60vb jcs2n60rb jcs2n60cb jcs2n60fb jcs2n60mb jcs2n60mfb.pdf

JCS2N60VB JCS2N60VB

N RN-CHANNEL MOSFET JCS2N60B MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V RdsonVgs=10V 4.5 -MAX Qg-TYP 5.9nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

 6.1. Size:1813K  jilin sino
jcs2n60t jcs2n60v jcs2n60r jcs2n60c jcs2n60f.pdf

JCS2N60VB JCS2N60VB

R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS l High efficiency switch l mode power supplies l l Electronic lamp ballasts l LED based on half bridge l LED power supplie FEATURES l Low gate c

 6.2. Size:1742K  jilin sino
jcs2n60t jcs2n60mf jcs2n60v jcs2n60r jcs2n60c jcs2n60f.pdf

JCS2N60VB JCS2N60VB

R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplie FEATURES

 6.3. Size:975K  jilin sino
jcs2n60t jcs2n60mf jcs2n60v jcs2n60r jcs2n60n jcs2n60c jcs2n60f.pdf

JCS2N60VB JCS2N60VB

R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplie FEATURES

 6.4. Size:1443K  jilin sino
jcs2n60r jcs2n60v jcs2n60c jcs2n60f.pdf

JCS2N60VB JCS2N60VB

N RN-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max 5 Vgs=10V Qg 15.3 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURES

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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