KNY3404C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KNY3404C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 52.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 28 nC
trⓘ - Tiempo de subida: 11.5 nS
Cossⓘ - Capacitancia de salida: 270 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
Paquete / Cubierta: DFN5X6
Búsqueda de reemplazo de MOSFET KNY3404C
KNY3404C Datasheet (PDF)
kny3404c.pdf
80A40VKNX3404CN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KND3404C is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON andgate charge for most of the synchronous buck converter applications. The KND3404Cmeet the RoHs andGreen Product requirement 100%EASGuaranteed with full functionreliability approved.
knd3404c kny3404c.pdf
80A40VKNX3404CN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KND3404C is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON andgate charge for most of the synchronous buck converter applications. The KND3404Cmeet the RoHs andGreen Product requirement 100%EASGuaranteed with full functionreliability approved.
kny3403b.pdf
85A 30VN-CHANNEL MOSFETKNX3403BKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. FeaturesKNX3403B is an N-channel enhancement mode power Mosfet field effect transistor which is producedusing KIAs LVMosfet technology.the improved process and cell structure have been especially tailored tominimize on-state resistance,provide superior switching performance. This devi
kny3403a.pdf
85A30VN-CHANNEL MOSFETKNX3403AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =4.5m (typ.)@ V =10VDS(on) GS Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss High avalanche Current2. Application Load Switch SMPS3. Pin configurationPin PinFunctionDFN5*6 TO-2524 1 Gate5,6,7,8 2 Drain
kny3406c.pdf
80A60VKNX3406CN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =7.0m@V =10VDS(ON),typ. GS Super lowgate charge Excellent Cdv/dt effect decline Advanced high cell density trench technology2. Applications Motor control and drive Battery management UPS(Uninterrupible Power Supplies)3. PinconfigurationPin Function4 Gate
knd3403a kny3403a.pdf
85A30VN-CHANNEL MOSFETKNX3403AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =4.5m (typ.)@ V =10VDS(on) GS Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss High avalanche Current2. Application Load Switch SMPS3. Pin configurationPin PinFunctionDFN5*6 TO-2524 1 Gate5,6,7,8 2 Drain
kny3406c.pdf
80A60VKNX3406CN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =7.0m@V =10VDS(ON),typ. GS Super lowgate charge Excellent Cdv/dt effect decline Advanced high cell density trench technology2. Applications Motor control and drive Battery management UPS(Uninterrupible Power Supplies)3. PinconfigurationPin Function4 Gate
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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