KNY3404C MOSFET. Datasheet pdf. Equivalent
Type Designator: KNY3404C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 52.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 28 nC
trⓘ - Rise Time: 11.5 nS
Cossⓘ - Output Capacitance: 270 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: DFN5X6
KNY3404C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KNY3404C Datasheet (PDF)
kny3404c.pdf
80A40VKNX3404CN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KND3404C is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON andgate charge for most of the synchronous buck converter applications. The KND3404Cmeet the RoHs andGreen Product requirement 100%EASGuaranteed with full functionreliability approved.
knd3404c kny3404c.pdf
80A40VKNX3404CN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KND3404C is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON andgate charge for most of the synchronous buck converter applications. The KND3404Cmeet the RoHs andGreen Product requirement 100%EASGuaranteed with full functionreliability approved.
kny3403b.pdf
85A 30VN-CHANNEL MOSFETKNX3403BKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. FeaturesKNX3403B is an N-channel enhancement mode power Mosfet field effect transistor which is producedusing KIAs LVMosfet technology.the improved process and cell structure have been especially tailored tominimize on-state resistance,provide superior switching performance. This devi
kny3403a.pdf
85A30VN-CHANNEL MOSFETKNX3403AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =4.5m (typ.)@ V =10VDS(on) GS Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss High avalanche Current2. Application Load Switch SMPS3. Pin configurationPin PinFunctionDFN5*6 TO-2524 1 Gate5,6,7,8 2 Drain
kny3406c.pdf
80A60VKNX3406CN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =7.0m@V =10VDS(ON),typ. GS Super lowgate charge Excellent Cdv/dt effect decline Advanced high cell density trench technology2. Applications Motor control and drive Battery management UPS(Uninterrupible Power Supplies)3. PinconfigurationPin Function4 Gate
knd3403a kny3403a.pdf
85A30VN-CHANNEL MOSFETKNX3403AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =4.5m (typ.)@ V =10VDS(on) GS Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss High avalanche Current2. Application Load Switch SMPS3. Pin configurationPin PinFunctionDFN5*6 TO-2524 1 Gate5,6,7,8 2 Drain
kny3406c.pdf
80A60VKNX3406CN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =7.0m@V =10VDS(ON),typ. GS Super lowgate charge Excellent Cdv/dt effect decline Advanced high cell density trench technology2. Applications Motor control and drive Battery management UPS(Uninterrupible Power Supplies)3. PinconfigurationPin Function4 Gate
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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