S-L2N7002DW1T1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: S-L2N7002DW1T1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.115 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 25(max) pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7.5 Ohm
Paquete / Cubierta: SOT363
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S-L2N7002DW1T1G Datasheet (PDF)
l2n7002dw1t1g s-l2n7002dw1t1g.pdf

L2N7002DW1T1GS-L2N7002DW1T1GSmall Signal MOSFET115 mAmps, 60V NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.ESD Protected:1000V2. DE
l2n7002lt1g s-l2n7002lt1g.pdf

L2N7002LT1GS-L2N7002LT1GSmall Signal MOSFET115 mAmps, 60 Volts NChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.ESD Protected:1000V2.
l2n7002m3t5g s-l2n7002m3t5g.pdf

LESHAN RADIO COMPANY, LTD.Small Signal MOSFETL2N7002M3T5G115 mAmps, 60 VoltsS-L2N7002M3T5GNChannel SOT7233 Pb-Free Package is Available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.21ORDERING INFORMATIONSOT-723Device Marking ShippingL2N7002M3T5G72 8000 Tap
l2n7002swt1g s-l2n7002swt1g.pdf

L2N7002SWT1GS-L2N7002SWT1GSmall Signal MOSFET380 mAmps, 60 Volts NChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.ESD protectedLow R
Otros transistores... KNY3204A , KNY3303A , KNY3403A , KNY3404C , KNY3406C , KNY3703A , KPE4403A2 , KPE4703A , IRF840 , L2N7002FLT1G , L2N7002KDW1T1G , L2N7002KDW1T3G , L2N7002KLT1G , L2N7002KN3T5G , S-L2N7002LT1G , L2N7002M3T5G , S-L2N7002M3T5G .
History: FQD7P06TF | CEF80N15 | CEP60N10
History: FQD7P06TF | CEF80N15 | CEP60N10



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