S-L2N7002DW1T1G Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: S-L2N7002DW1T1G
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.25 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.115 A
Tjⓘ - Максимальная температура канала: 150 °C
Cossⓘ - Выходная емкость: 25(max) pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 7.5 Ohm
Тип корпуса: SOT363
- подбор MOSFET транзистора по параметрам
S-L2N7002DW1T1G Datasheet (PDF)
l2n7002dw1t1g s-l2n7002dw1t1g.pdf

L2N7002DW1T1GS-L2N7002DW1T1GSmall Signal MOSFET115 mAmps, 60V NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.ESD Protected:1000V2. DE
l2n7002lt1g s-l2n7002lt1g.pdf

L2N7002LT1GS-L2N7002LT1GSmall Signal MOSFET115 mAmps, 60 Volts NChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.ESD Protected:1000V2.
l2n7002m3t5g s-l2n7002m3t5g.pdf

LESHAN RADIO COMPANY, LTD.Small Signal MOSFETL2N7002M3T5G115 mAmps, 60 VoltsS-L2N7002M3T5GNChannel SOT7233 Pb-Free Package is Available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.21ORDERING INFORMATIONSOT-723Device Marking ShippingL2N7002M3T5G72 8000 Tap
l2n7002swt1g s-l2n7002swt1g.pdf

L2N7002SWT1GS-L2N7002SWT1GSmall Signal MOSFET380 mAmps, 60 Volts NChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.ESD protectedLow R
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IPD50R3K0CE | FDC654P | OSG55R074HSZF | IXFX30N110P | 2SK1501 | SM4522NHKP | PNMET20V06E
History: IPD50R3K0CE | FDC654P | OSG55R074HSZF | IXFX30N110P | 2SK1501 | SM4522NHKP | PNMET20V06E



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