S-LBSS260DW1T1G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: S-LBSS260DW1T1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.38 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 3.5 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.44 Ohm
Encapsulados: SOT363
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S-LBSS260DW1T1G datasheet
lbss260dw1t1g s-lbss260dw1t1g.pdf
LBSS260DW1T1G S-LBSS260DW1T1G N-Channel 60-V Power Mosfet 1. FEATURES High speed switch ESD protected We declare that the material of product compliance with RoHS requirements and Halogen Free. SC88(SOT-363) S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. APPLICATION
lbss138wt1g s-lbss138wt1g.pdf
LBSS138WT1G S-LBSS138WT1G Power MOSFET 200 mAmps, 50 Volts N Channel SC-70 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. Low threshold voltage (VGS(th)
lbss84wt1g s-lbss84wt1g.pdf
LBSS84WT1G S-LBSS84WT1G Power MOSFET 130 mA, 50V P Channel SC-70 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. Energy efficient 2. DEVICE MARKING AND OR
lbss84lt1g s-lbss84lt1g.pdf
LBSS84LT1G S-LBSS84LT1G Power MOSFET 130 mA, 50V P Channel SOT-23 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. Energy efficient 2. DEVICE MARKING AND O
Otros transistores... S-LBSS138LT1G , LBSS138WT1G , S-LBSS138WT1G , LBSS139DW1T1G , LBSS139DW1T3G , LBSS139LT1G , LBSS139LT3G , LBSS260DW1T1G , STP75NF75 , LBSS8402DW1T1G , S-LBSS8402DW1T1G , LBSS84DW1T1G , S-LBSS84DW1T1G , LBSS84ELT1G , S-LBSS84ELT1G , SLD2N65UZ , SLU2N65UZ .
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