All MOSFET. S-LBSS260DW1T1G Datasheet

 

S-LBSS260DW1T1G Datasheet and Replacement


   Type Designator: S-LBSS260DW1T1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 3.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.44 Ohm
   Package: SOT363
 

 S-LBSS260DW1T1G substitution

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S-LBSS260DW1T1G Datasheet (PDF)

 0.1. Size:426K  lrc
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S-LBSS260DW1T1G

LBSS260DW1T1GS-LBSS260DW1T1GN-Channel 60-V Power Mosfet1. FEATURESHigh speed switchESD protectedWe declare that the material of product compliance withRoHS requirements and Halogen Free.SC88(SOT-363)S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.2. APPLICATION

 8.1. Size:560K  lrc
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S-LBSS260DW1T1G

LBSS138WT1GS-LBSS138WT1GPower MOSFET200 mAmps, 50 Volts NChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.Low threshold voltage (VGS(th):

 8.2. Size:611K  lrc
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S-LBSS260DW1T1G

LBSS84WT1GS-LBSS84WT1GPower MOSFET130 mA, 50V PChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.Energy efficient2. DEVICE MARKING AND OR

 8.3. Size:477K  lrc
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S-LBSS260DW1T1G

LBSS84LT1GS-LBSS84LT1GPower MOSFET130 mA, 50V PChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.Energy efficient2. DEVICE MARKING AND O

Datasheet: S-LBSS138LT1G , LBSS138WT1G , S-LBSS138WT1G , LBSS139DW1T1G , LBSS139DW1T3G , LBSS139LT1G , LBSS139LT3G , LBSS260DW1T1G , 12N60 , LBSS8402DW1T1G , S-LBSS8402DW1T1G , LBSS84DW1T1G , S-LBSS84DW1T1G , LBSS84ELT1G , S-LBSS84ELT1G , SLD2N65UZ , SLU2N65UZ .

History: TSM75N75CZ | AP4543GEH-HF | PDN2309S | NCE60N1K0I

Keywords - S-LBSS260DW1T1G MOSFET datasheet

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