LBSS84DW1T1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: LBSS84DW1T1G
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 8.6 nS
   Cossⓘ - Capacitancia de salida: 20 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 10 Ohm
   Paquete / Cubierta: SOT363

Búsqueda de reemplazo de MOSFET LBSS84DW1T1G

LBSS84DW1T1G Datasheet (PDF)

..1. Size:500K lrc
lbss84dw1t1g s-lbss84dw1t1g.pdf

LESHAN RADIO COMPANY, LTD.Power MOSFET mAmps, 50 Vots130PChannel SC88LBSS84DW1T1GS-LBSS84DW1T1GThese miniature surface mount MOSFETs reduce power lossconserve energy, making this device ideal for use in small powermanagement circuitry. Typical applications are dcdc converters, loadswitching, power management in portable and batterypoweredproducts such as compute

8.1. Size:611K lrc
lbss84wt1g s-lbss84wt1g.pdf

LBSS84WT1GS-LBSS84WT1GPower MOSFET130 mA, 50V PChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.Energy efficient2. DEVICE MARKING AND OR

8.2. Size:477K lrc
lbss84lt1g s-lbss84lt1g.pdf

LBSS84LT1GS-LBSS84LT1GPower MOSFET130 mA, 50V PChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.Energy efficient2. DEVICE MARKING AND O

8.3. Size:553K lrc
lbss84elt1g s-lbss84elt1g.pdf

LBSS84ELT1GS-LBSS84ELT1GPower MOSFET 60V PChannel1. FEATURESAdvanced trench cell design.High speed switch.G-S ESD Protected: 1000VPb-Free Package is available.We declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change re

8.4. Size:635K lrc
lbss8402dw1t1g s-lbss8402dw1t1g.pdf

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: LNC4N80

Liste

Recientemente añadidas las descripciónes de los transistores: