All MOSFET. LBSS84DW1T1G Datasheet

 

LBSS84DW1T1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: LBSS84DW1T1G
   Marking Code: PD
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 0.13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6 nC
   trⓘ - Rise Time: 8.6 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
   Package: SOT363

 LBSS84DW1T1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LBSS84DW1T1G Datasheet (PDF)

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lbss84dw1t1g s-lbss84dw1t1g.pdf

LBSS84DW1T1G
LBSS84DW1T1G

LESHAN RADIO COMPANY, LTD.Power MOSFET mAmps, 50 Vots130PChannel SC88LBSS84DW1T1GS-LBSS84DW1T1GThese miniature surface mount MOSFETs reduce power lossconserve energy, making this device ideal for use in small powermanagement circuitry. Typical applications are dcdc converters, loadswitching, power management in portable and batterypoweredproducts such as compute

 8.1. Size:611K  lrc
lbss84wt1g s-lbss84wt1g.pdf

LBSS84DW1T1G
LBSS84DW1T1G

LBSS84WT1GS-LBSS84WT1GPower MOSFET130 mA, 50V PChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.Energy efficient2. DEVICE MARKING AND OR

 8.2. Size:477K  lrc
lbss84lt1g s-lbss84lt1g.pdf

LBSS84DW1T1G
LBSS84DW1T1G

LBSS84LT1GS-LBSS84LT1GPower MOSFET130 mA, 50V PChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.Energy efficient2. DEVICE MARKING AND O

 8.3. Size:553K  lrc
lbss84elt1g s-lbss84elt1g.pdf

LBSS84DW1T1G
LBSS84DW1T1G

LBSS84ELT1GS-LBSS84ELT1GPower MOSFET 60V PChannel1. FEATURESAdvanced trench cell design.High speed switch.G-S ESD Protected: 1000VPb-Free Package is available.We declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change re

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lbss8402dw1t1g s-lbss8402dw1t1g.pdf

LBSS84DW1T1G

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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