SLU5N50S2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SLU5N50S2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 55 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
Paquete / Cubierta: TO251
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SLU5N50S2 Datasheet (PDF)
sld5n50s2 slu5n50s2.pdf

LEAD FREEPbRoHSSLD5N50S2 / SLU5N50S2500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 5A, 500V, RDS(on) typ. = 1.35@VGS = 10 V( ) ypadvanced planar stripe DMOS technology. - Low gate charge ( typical 10 nC)This advanced technology has been especially tailored to - High ruggednessminimize on-state resistance, provide super
sld5n65s slu5n65s.pdf

SLD5N65S / SLU5N65SSLD5N65S / SLU5N65S650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 4.5A, 650V, RDS(on) = 2.5@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 13.3nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching
Otros transistores... LBSS84DW1T1G , S-LBSS84DW1T1G , LBSS84ELT1G , S-LBSS84ELT1G , SLD2N65UZ , SLU2N65UZ , SLD3101 , SLD5N50S2 , IRFB3607 , SLD5N65S , SLU5N65S , SLD60R380S2 , SLU60R380S2 , SLD60R650S2 , SLU60R650S2 , SLD65R420S2 , SLU65R420S2 .
History: 2SK2508 | NCE40P70K | CTLDM7120-M832D | 4N60G-TM3-T | 4N60L-TMS-T | VBZMB8N60 | 2SK810
History: 2SK2508 | NCE40P70K | CTLDM7120-M832D | 4N60G-TM3-T | 4N60L-TMS-T | VBZMB8N60 | 2SK810



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