SLD60R380S2 Todos los transistores

 

SLD60R380S2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SLD60R380S2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 89 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 29 nS
   Cossⓘ - Capacitancia de salida: 38 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
   Paquete / Cubierta: TO252
 

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SLD60R380S2 Datasheet (PDF)

 ..1. Size:1022K  maple semi
 sld60r380s2 slu60r380s2.pdf pdf_icon

SLD60R380S2

SLD60R380S2/SLU60R380S2600V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 11A, 600V, RDS(on)typ= 0.3@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 22nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingper

 8.1. Size:1010K  maple semi
 sld60r650s2 slu60r650s2.pdf pdf_icon

SLD60R380S2

SLD60R650S2/SLU60R650S2600V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 7A, 600V, RDS(on)typ= 0.48@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 16nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingper

 9.1. Size:4818K  maple semi
 sld60n04tb.pdf pdf_icon

SLD60R380S2

SLD60N04TB40V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 66A, 40V, RDS(on),Typ = 5.3mTRENCH technology. This advanced technology has been es- Low gate charge (Qg,typ = 54nC)pecially tailored to minimize conduction loss, provide superior Fast switchingswitching performance, and withstand high energy pulse in t

Otros transistores... S-LBSS84ELT1G , SLD2N65UZ , SLU2N65UZ , SLD3101 , SLD5N50S2 , SLU5N50S2 , SLD5N65S , SLU5N65S , 12N60 , SLU60R380S2 , SLD60R650S2 , SLU60R650S2 , SLD65R420S2 , SLU65R420S2 , SLD65R700S2 , SLU65R700S2 , SLD65R950S2 .

History: IRFR120TR | 7N80G-TF1-T | JMSH0402BGQ | JMSH1004NC | RU17P12C | JMSH1008PK | JMSL0301AG

 

 
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