SLD60R380S2 - аналоги, параметры транзистора - Справочник транзисторов

SLD60R380S2 даташит

..1. Size:1022K maple semi
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SLD60R380S2/SLU60R380S2 600V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 11A, 600V, RDS(on)typ= 0.3 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 22nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching per

8.1. Size:1010K maple semi
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SLD60R650S2/SLU60R650S2 600V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7A, 600V, RDS(on)typ= 0.48 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 16nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching per

9.1. Size:4818K maple semi
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SLD60N04TB 40V N-Channel MOSFET General Description Features This Power MOSFET is produced using Msemitek s advanced 66A, 40V, RDS(on),Typ = 5.3m TRENCH technology. This advanced technology has been es- Low gate charge (Qg,typ = 54nC) pecially tailored to minimize conduction loss, provide superior Fast switching switching performance, and withstand high energy pulse in t

Другие MOSFET... S-LBSS84ELT1G , SLD2N65UZ , SLU2N65UZ , SLD3101 , SLD5N50S2 , SLU5N50S2 , SLD5N65S , SLU5N65S , 12N60 , SLU60R380S2 , SLD60R650S2 , SLU60R650S2 , SLD65R420S2 , SLU65R420S2 , SLD65R700S2 , SLU65R700S2 , SLD65R950S2 .