SLU60R650S2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SLU60R650S2  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 29 nS

Cossⓘ - Capacitancia de salida: 26 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm

Encapsulados: TO251

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SLU60R650S2 datasheet

 ..1. Size:1010K  maple semi
 sld60r650s2 slu60r650s2.pdf pdf_icon

SLU60R650S2

SLD60R650S2/SLU60R650S2 600V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7A, 600V, RDS(on)typ= 0.48 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 16nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching per

 8.1. Size:1022K  maple semi
 sld60r380s2 slu60r380s2.pdf pdf_icon

SLU60R650S2

SLD60R380S2/SLU60R380S2 600V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 11A, 600V, RDS(on)typ= 0.3 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 22nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching per

Otros transistores... SLD3101, SLD5N50S2, SLU5N50S2, SLD5N65S, SLU5N65S, SLD60R380S2, SLU60R380S2, SLD60R650S2, IRFB3607, SLD65R420S2, SLU65R420S2, SLD65R700S2, SLU65R700S2, SLD65R950S2, SLD70R420S2, SLU70R420S2, SLD70R600S2