SLD65R950S2 Todos los transistores

 

SLD65R950S2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SLD65R950S2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 27 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 32 nS
   Cossⓘ - Capacitancia de salida: 16 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.95 Ohm
   Paquete / Cubierta: TO252
 

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SLD65R950S2 Datasheet (PDF)

 ..1. Size:791K  maple semi
 sld65r950s2.pdf pdf_icon

SLD65R950S2

SLD65R950S2650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 5A, 650V, RDS(on) = 950m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingperformance, and withstand h

 8.1. Size:5183K  maple semi
 sld65r380e7c.pdf pdf_icon

SLD65R950S2

SLD65R380E7C650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 11A, 650V, RDS(on),Typ = 320mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 22nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switchi

 8.2. Size:5187K  maple semi
 sld65r280e7c.pdf pdf_icon

SLD65R950S2

SLD65R280E7C650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 14A, 650V, RDS(on),Typ = 230mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 30nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switchi

 8.3. Size:4377K  maple semi
 sld65r600e7c.pdf pdf_icon

SLD65R950S2

SLD65R600E7C650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 8.4A, 650V, RDS(on),Typ = 510mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 13nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switch

MOSTRAR MÁS

Otros transistores... SLD60R380S2 , SLU60R380S2 , SLD60R650S2 , SLU60R650S2 , SLD65R420S2 , SLU65R420S2 , SLD65R700S2 , SLU65R700S2 , 2N7002 , SLD70R420S2 , SLU70R420S2 , SLD70R600S2 , SLU70R600S2 , SLD70R900S2 , SLF70R900S2 , SLD740UZ , SLD80R380SJ .

History: MTP15N05E | AP50T10GI-HF | JMSH0804NK | SLD70R900S2 | SGSP363 | AP05N50P | KP723B

 

 
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