SLD65R950S2 - аналоги и даташиты транзистора

 

SLD65R950S2 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: SLD65R950S2
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 27 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 32 ns
   Cossⓘ - Выходная емкость: 16 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.95 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для SLD65R950S2

   - подбор ⓘ MOSFET транзистора по параметрам

 

SLD65R950S2 Datasheet (PDF)

 ..1. Size:791K  maple semi
 sld65r950s2.pdf pdf_icon

SLD65R950S2

SLD65R950S2650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 5A, 650V, RDS(on) = 950m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingperformance, and withstand h

 8.1. Size:5183K  maple semi
 sld65r380e7c.pdf pdf_icon

SLD65R950S2

SLD65R380E7C650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 11A, 650V, RDS(on),Typ = 320mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 22nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switchi

 8.2. Size:5187K  maple semi
 sld65r280e7c.pdf pdf_icon

SLD65R950S2

SLD65R280E7C650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 14A, 650V, RDS(on),Typ = 230mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 30nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switchi

 8.3. Size:4377K  maple semi
 sld65r600e7c.pdf pdf_icon

SLD65R950S2

SLD65R600E7C650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 8.4A, 650V, RDS(on),Typ = 510mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 13nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switch

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... SLD60R380S2 , SLU60R380S2 , SLD60R650S2 , SLU60R650S2 , SLD65R420S2 , SLU65R420S2 , SLD65R700S2 , SLU65R700S2 , IRFP250 , SLD70R420S2 , SLU70R420S2 , SLD70R600S2 , SLU70R600S2 , SLD70R900S2 , SLF70R900S2 , SLD740UZ , SLD80R380SJ .

History: GSM3016S | NCE4080D | NCEP3045GU | 3N80L-TF3-T | 3N70G-TN3-R | AP9950AGH | 3N70L-TN3-R

 

 
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