SLD70R600S2 Todos los transistores

 

SLD70R600S2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SLD70R600S2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 28 nS
   Cossⓘ - Capacitancia de salida: 27 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO252
 

 Búsqueda de reemplazo de SLD70R600S2 MOSFET

   - Selección ⓘ de transistores por parámetros

 

SLD70R600S2 Datasheet (PDF)

 ..1. Size:443K  maple semi
sld70r600s2 slu70r600s2.pdf pdf_icon

SLD70R600S2

SLD70R600S2/SLU70R600S2700V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 7A, 700V, RDS(on)typ= 0.52@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 18nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingper

 8.1. Size:789K  maple semi
sld70r420s2 slu70r420s2.pdf pdf_icon

SLD70R600S2

SLD70R420S2/SLU70R420S2700V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 11A, 700V, RDS(on)typ= 0.37@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 24nC)This advanced technology has been especially tailored to - High ruggednessminimize conduction loss, provide superior switching - Fast switc

 8.2. Size:710K  maple semi
sld70r900s2 slf70r900s2.pdf pdf_icon

SLD70R600S2

SLD70R900S2 / SLF70R900S2700V N-Channel Power MOSFET General Description FeaturesThis Power MOSFET is produced using Maple semis - 5A, 700V, RDS(on) typ. = 0.8@VGS = 10 Vadvanced planar stripe DMOS technology. - Extended Safe Operating AreaThis advanced technology has been especially tailored to - Ease of Parallelingminimize on-state resistance, provide superior switching - Fas

Otros transistores... SLU60R650S2 , SLD65R420S2 , SLU65R420S2 , SLD65R700S2 , SLU65R700S2 , SLD65R950S2 , SLD70R420S2 , SLU70R420S2 , IRFZ24N , SLU70R600S2 , SLD70R900S2 , SLF70R900S2 , SLD740UZ , SLD80R380SJ , SLU80R380SJ , SLP80R380SJ , SLF80R380SJ .

History: P4004ED | LNND04R120 | SSM6K06FU

 

 
Back to Top

 


 
.