SLD70R600S2 MOSFET. Datasheet pdf. Equivalent
Type Designator: SLD70R600S2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 700 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 7 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 18 nC
Rise Time (tr): 28 nS
Drain-Source Capacitance (Cd): 27 pF
Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm
Package: TO252
SLD70R600S2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SLD70R600S2 Datasheet (PDF)
sld70r600s2 slu70r600s2.pdf
SLD70R600S2/SLU70R600S2700V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 7A, 700V, RDS(on)typ= 0.52@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 18nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingper
sld70r420s2 slu70r420s2.pdf
SLD70R420S2/SLU70R420S2700V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 11A, 700V, RDS(on)typ= 0.37@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 24nC)This advanced technology has been especially tailored to - High ruggednessminimize conduction loss, provide superior switching - Fast switc
sld70r900s2 slf70r900s2.pdf
SLD70R900S2 / SLF70R900S2700V N-Channel Power MOSFET General Description FeaturesThis Power MOSFET is produced using Maple semis - 5A, 700V, RDS(on) typ. = 0.8@VGS = 10 Vadvanced planar stripe DMOS technology. - Extended Safe Operating AreaThis advanced technology has been especially tailored to - Ease of Parallelingminimize on-state resistance, provide superior switching - Fas
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