SLF60R650S2 Todos los transistores

 

SLF60R650S2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SLF60R650S2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 29 nS
   Cossⓘ - Capacitancia de salida: 26 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm
   Paquete / Cubierta: TO220F
 

 Búsqueda de reemplazo de SLF60R650S2 MOSFET

   - Selección ⓘ de transistores por parámetros

 

SLF60R650S2 Datasheet (PDF)

 ..1. Size:1025K  maple semi
 slf60r650s2.pdf pdf_icon

SLF60R650S2

SLF60R650S2600V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 7A, 600V, RDS(on)typ= 0.48@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 16nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingperformance, an

 8.1. Size:960K  maple semi
 slp60r190s2 slf60r190s2.pdf pdf_icon

SLF60R650S2

SLP60R190S2/SLF60R190S2600V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 20A, 600V, RDS(on)typ= 0.16@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 39nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingpe

 8.2. Size:716K  maple semi
 slp60r850s2 slf60r850s2.pdf pdf_icon

SLF60R650S2

SLP60R850S2/SLF60R850S2600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 5A, 600V, RDS(on) = 850m@VGS = 10 Vadvanced Super-Junction MOSFET technology. - Low gate charge This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingperformance,

 8.3. Size:461K  maple semi
 slf60r160s2.pdf pdf_icon

SLF60R650S2

SLF60R160S2600V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 24A, 600V, RDS(on)typ= 0.14@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 49nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingperformance, a

MOSTRAR MÁS

Otros transistores... SLB80R850SJ , SLI80R850SJ , SLF3101 , SLP3101 , SLF50R140SJ , SLP50R140SJ , SLF60R080SS , SLF60R160S2 , IRF1405 , SLF65R300S2 , SLF65R700S2 , SLF65R950S2 , SLH60R080SS , SLP10N60C , SLF10N60C , SLP10N65A , SLF10N65A .

History: SLP10N65S | AP4501AGEM-HF | GP2M007A065XG | AP6N1R7CDT | SPI21N50C3 | AO4484 | VP3203N3

 

 
Back to Top

 


 
.