SLF60R650S2 datasheet, аналоги, основные параметры

Наименование производителя: SLF60R650S2  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 30 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 29 ns

Cossⓘ - Выходная емкость: 26 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm

Тип корпуса: TO220F

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Аналог (замена) для SLF60R650S2

- подборⓘ MOSFET транзистора по параметрам

 

SLF60R650S2 даташит

 ..1. Size:1025K  maple semi
 slf60r650s2.pdf pdf_icon

SLF60R650S2

SLF60R650S2 600V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7A, 600V, RDS(on)typ= 0.48 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 16nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching performance, an

 8.1. Size:960K  maple semi
 slp60r190s2 slf60r190s2.pdf pdf_icon

SLF60R650S2

SLP60R190S2/SLF60R190S2 600V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 20A, 600V, RDS(on)typ= 0.16 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 39nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching pe

 8.2. Size:716K  maple semi
 slp60r850s2 slf60r850s2.pdf pdf_icon

SLF60R650S2

SLP60R850S2/SLF60R850S2 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 5A, 600V, RDS(on) = 850m @VGS = 10 V advanced Super-Junction MOSFET technology. - Low gate charge This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching performance,

 8.3. Size:461K  maple semi
 slf60r160s2.pdf pdf_icon

SLF60R650S2

SLF60R160S2 600V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 24A, 600V, RDS(on)typ= 0.14 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 49nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching performance, a

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