SLF5N50S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SLF5N50S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 38 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 22 nC
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 100 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MOSFET SLF5N50S
SLF5N50S Datasheet (PDF)
slp5n50s slf5n50s.pdf
LEAD FREE Pb RoHS SLP5N50S / SLF5N50S 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semis - 5A, 500V, RDS(on) typ. = 1.12@VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 22 nC) This advanced technology has been especially tailored to - High ruggedness minimize on-state resistance, provide superi
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SLP5N65S/SLF5N65S650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 4.5A, 650V, RDS(on)Max = 2.5@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 13nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingper
slp5n65c slf5n65c.pdf
SLP5N65C / SLF5N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 4.5A, 650V, RDS(on)typ. = 2.6@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 16nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching
slp5n60c slf5n60c.pdf
SLP5N60C/SLF5N60C600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 4.5A, 600V, RDS(on)typ. = 2.0@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 16nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingpe
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
