All MOSFET. SLF5N50S Datasheet

 

SLF5N50S Datasheet and Replacement


   Type Designator: SLF5N50S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO220F
 

 SLF5N50S substitution

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SLF5N50S Datasheet (PDF)

 ..1. Size:1128K  maple semi
 slp5n50s slf5n50s.pdf pdf_icon

SLF5N50S

LEAD FREE Pb RoHS SLP5N50S / SLF5N50S 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semis - 5A, 500V, RDS(on) typ. = 1.12@VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 22 nC) This advanced technology has been especially tailored to - High ruggedness minimize on-state resistance, provide superi

 9.1. Size:637K  maple semi
 slp5n65s slf5n65s.pdf pdf_icon

SLF5N50S

SLP5N65S/SLF5N65S650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 4.5A, 650V, RDS(on)Max = 2.5@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 13nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingper

 9.2. Size:359K  maple semi
 slp5n65c slf5n65c.pdf pdf_icon

SLF5N50S

SLP5N65C / SLF5N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 4.5A, 650V, RDS(on)typ. = 2.6@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 16nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching

 9.3. Size:299K  maple semi
 slp5n60c slf5n60c.pdf pdf_icon

SLF5N50S

SLP5N60C/SLF5N60C600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 4.5A, 600V, RDS(on)typ. = 2.0@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 16nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingpe

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Datasheet: SLF20N50C , SLP2N65UZ , SLF2N65UZ , SLP32N20C , SLF32N20C , SLP40N26C , SLF40N26C , SLP5N50S , IRFP250N , SLP5N60C , SLF5N60C , SLP5N65C , SLF5N65C , SLP5N65S , SLF5N65S , SLP60R190S2 , SLF60R190S2 .

Keywords - SLF5N50S MOSFET datasheet

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