SLF5N65S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SLF5N65S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 36 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 53.8 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm

Encapsulados: TO220F

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SLF5N65S datasheet

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 slp5n65s slf5n65s.pdf pdf_icon

SLF5N65S

SLP5N65S/SLF5N65S 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 4.5A, 650V, RDS(on)Max = 2.5 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 13nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching per

 7.1. Size:359K  maple semi
 slp5n65c slf5n65c.pdf pdf_icon

SLF5N65S

SLP5N65C / SLF5N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 4.5A, 650V, RDS(on)typ. = 2.6 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 16nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching

 8.1. Size:299K  maple semi
 slp5n60c slf5n60c.pdf pdf_icon

SLF5N65S

SLP5N60C/SLF5N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 4.5A, 600V, RDS(on)typ. = 2.0 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 16nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching pe

 9.1. Size:1128K  maple semi
 slp5n50s slf5n50s.pdf pdf_icon

SLF5N65S

LEAD FREE Pb RoHS SLP5N50S / SLF5N50S 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 5A, 500V, RDS(on) typ. = 1.12 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 22 nC) This advanced technology has been especially tailored to - High ruggedness minimize on-state resistance, provide superi

MOSTRAR MÁS

Otros transistores... SLF40N26C, SLP5N50S, SLF5N50S, SLP5N60C, SLF5N60C, SLP5N65C, SLF5N65C, SLP5N65S, IRF630, SLP60R190S2, SLF60R190S2, SLP60R380S2, SLF60R380S2, SLP60R850S2, SLF60R850S2, SLP65R420S2, SLF65R420S2