SLF5N65S
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SLF5N65S
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 36
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 4.5
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 13
nC
trⓘ -
Время нарастания: 10
ns
Cossⓘ - Выходная емкость: 53.8
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.5
Ohm
Тип корпуса:
TO220F
Аналог (замена) для SLF5N65S
SLF5N65S
Datasheet (PDF)
..1. Size:637K maple semi
slp5n65s slf5n65s.pdf SLP5N65S/SLF5N65S650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 4.5A, 650V, RDS(on)Max = 2.5@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 13nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingper
7.1. Size:359K maple semi
slp5n65c slf5n65c.pdf SLP5N65C / SLF5N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 4.5A, 650V, RDS(on)typ. = 2.6@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 16nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching
8.1. Size:299K maple semi
slp5n60c slf5n60c.pdf SLP5N60C/SLF5N60C600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 4.5A, 600V, RDS(on)typ. = 2.0@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 16nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingpe
9.1. Size:1128K maple semi
slp5n50s slf5n50s.pdf LEAD FREE Pb RoHS SLP5N50S / SLF5N50S 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semis - 5A, 500V, RDS(on) typ. = 1.12@VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 22 nC) This advanced technology has been especially tailored to - High ruggedness minimize on-state resistance, provide superi
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