SLF60R850S2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SLF60R850S2  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 29 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 31 nS

Cossⓘ - Capacitancia de salida: 17 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm

Encapsulados: TO220F

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SLF60R850S2 datasheet

 ..1. Size:716K  maple semi
 slp60r850s2 slf60r850s2.pdf pdf_icon

SLF60R850S2

SLP60R850S2/SLF60R850S2 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 5A, 600V, RDS(on) = 850m @VGS = 10 V advanced Super-Junction MOSFET technology. - Low gate charge This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching performance,

 8.1. Size:960K  maple semi
 slp60r190s2 slf60r190s2.pdf pdf_icon

SLF60R850S2

SLP60R190S2/SLF60R190S2 600V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 20A, 600V, RDS(on)typ= 0.16 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 39nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching pe

 8.2. Size:1025K  maple semi
 slf60r650s2.pdf pdf_icon

SLF60R850S2

SLF60R650S2 600V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7A, 600V, RDS(on)typ= 0.48 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 16nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching performance, an

 8.3. Size:461K  maple semi
 slf60r160s2.pdf pdf_icon

SLF60R850S2

SLF60R160S2 600V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 24A, 600V, RDS(on)typ= 0.14 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 49nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching performance, a

MOSTRAR MÁS

Otros transistores... SLF5N65C, SLP5N65S, SLF5N65S, SLP60R190S2, SLF60R190S2, SLP60R380S2, SLF60R380S2, SLP60R850S2, IRF9540N, SLP65R420S2, SLF65R420S2, SLP70R420S2, SLF70R420S2, SLP70R600S2, SLF70R600S2, SLP740UZ, SLF740UZ