SLF60R850S2 MOSFET. Datasheet pdf. Equivalent
Type Designator: SLF60R850S2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 29 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 17 nC
trⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 17 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO220F
SLF60R850S2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SLF60R850S2 Datasheet (PDF)
slp60r850s2 slf60r850s2.pdf
SLP60R850S2/SLF60R850S2600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 5A, 600V, RDS(on) = 850m@VGS = 10 Vadvanced Super-Junction MOSFET technology. - Low gate charge This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingperformance,
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SLP60R190S2/SLF60R190S2600V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 20A, 600V, RDS(on)typ= 0.16@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 39nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingpe
slf60r650s2.pdf
SLF60R650S2600V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 7A, 600V, RDS(on)typ= 0.48@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 16nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingperformance, an
slf60r160s2.pdf
SLF60R160S2600V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 24A, 600V, RDS(on)typ= 0.14@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 49nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingperformance, a
slp60r380s2 slf60r380s2.pdf
SLP60R380S2/SLF60R380S2600V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 11A, 600V, RDS(on)typ= 0.3@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 22nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingper
slf60r080ss.pdf
SLF60R080SS 600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis Features - 47A, 600V, RDS(on) typ.= 68m@VGS =10 V Advanced Super-Junction technology. - Low gate charge ( typical 88nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been especially tailored - High ruggedness - Low gate charge ( t
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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