SLF60R850S2 Datasheet. Specs and Replacement
Type Designator: SLF60R850S2 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 29 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 17 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO220F
SLF60R850S2 substitution
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SLF60R850S2 datasheet
slp60r850s2 slf60r850s2.pdf
SLP60R850S2/SLF60R850S2 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 5A, 600V, RDS(on) = 850m @VGS = 10 V advanced Super-Junction MOSFET technology. - Low gate charge This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching performance, ... See More ⇒
slp60r190s2 slf60r190s2.pdf
SLP60R190S2/SLF60R190S2 600V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 20A, 600V, RDS(on)typ= 0.16 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 39nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching pe... See More ⇒
slf60r650s2.pdf
SLF60R650S2 600V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7A, 600V, RDS(on)typ= 0.48 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 16nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching performance, an... See More ⇒
slf60r160s2.pdf
SLF60R160S2 600V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 24A, 600V, RDS(on)typ= 0.14 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 49nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching performance, a... See More ⇒
Detailed specifications: SLF5N65C, SLP5N65S, SLF5N65S, SLP60R190S2, SLF60R190S2, SLP60R380S2, SLF60R380S2, SLP60R850S2, IRF9540N, SLP65R420S2, SLF65R420S2, SLP70R420S2, SLF70R420S2, SLP70R600S2, SLF70R600S2, SLP740UZ, SLF740UZ
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