SLF65R420S2 Todos los transistores

 

SLF65R420S2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SLF65R420S2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 35 W
   Voltaje máximo drenador - fuente |Vds|: 650 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 11 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 23 nC
   Tiempo de subida (tr): 35 nS
   Conductancia de drenaje-sustrato (Cd): 37 pF
   Resistencia entre drenaje y fuente RDS(on): 0.4 Ohm
   Paquete / Cubierta: TO220F

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SLF65R420S2 Datasheet (PDF)

 ..1. Size:569K  maple semi
slp65r420s2 slf65r420s2.pdf

SLF65R420S2 SLF65R420S2

SLP65R420S2/SLF65R420S2650V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 11A, 650V, RDS(on)typ= 0.33@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 23nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingpe

 8.1. Size:766K  maple semi
slf65r950s2.pdf

SLF65R420S2 SLF65R420S2

SLF65R950S2650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 5A, 650V, RDS(on) = 950m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingperformance, and withstand h

 8.2. Size:484K  maple semi
slf65r300s2.pdf

SLF65R420S2 SLF65R420S2

SLF65R300S2650V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 15A, 650V, RDS(on)typ= 0.26@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 24nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingperformance, a

 8.3. Size:979K  maple semi
slf65r700s2.pdf

SLF65R420S2 SLF65R420S2

SLF65R700S2650V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 7A, 650V, RDS(on)typ= 0.55@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 16nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingperformance, an

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