SLF65R420S2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SLF65R420S2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 35 nS
Cossⓘ - Capacitancia de salida: 37 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de SLF65R420S2 MOSFET
SLF65R420S2 Datasheet (PDF)
slp65r420s2 slf65r420s2.pdf

SLP65R420S2/SLF65R420S2650V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 11A, 650V, RDS(on)typ= 0.33@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 23nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingpe
slf65r950s2.pdf

SLF65R950S2650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 5A, 650V, RDS(on) = 950m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingperformance, and withstand h
slf65r300s2.pdf

SLF65R300S2650V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 15A, 650V, RDS(on)typ= 0.26@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 24nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingperformance, a
slf65r700s2.pdf

SLF65R700S2650V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 7A, 650V, RDS(on)typ= 0.55@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 16nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingperformance, an
Otros transistores... SLF5N65S , SLP60R190S2 , SLF60R190S2 , SLP60R380S2 , SLF60R380S2 , SLP60R850S2 , SLF60R850S2 , SLP65R420S2 , 5N60 , SLP70R420S2 , SLF70R420S2 , SLP70R600S2 , SLF70R600S2 , SLP740UZ , SLF740UZ , SLP7N60C , SLF7N60C .
History: MTP50N06V | WFF4N60 | IRFI260 | IRFB3806 | 2SK2063 | B1M160120HC | DMG10N60SCT
History: MTP50N06V | WFF4N60 | IRFI260 | IRFB3806 | 2SK2063 | B1M160120HC | DMG10N60SCT



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