SLF65R420S2 - аналоги и даташиты транзистора

 

SLF65R420S2 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: SLF65R420S2
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 35 ns
   Cossⓘ - Выходная емкость: 37 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для SLF65R420S2

   - подбор ⓘ MOSFET транзистора по параметрам

 

SLF65R420S2 Datasheet (PDF)

 ..1. Size:569K  maple semi
 slp65r420s2 slf65r420s2.pdf pdf_icon

SLF65R420S2

SLP65R420S2/SLF65R420S2650V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 11A, 650V, RDS(on)typ= 0.33@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 23nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingpe

 8.1. Size:2126K  maple semi
 slf65r1k2e7.pdf pdf_icon

SLF65R420S2

SLF65R1K2E7650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 4.9A*, 650V, RDS(on),Typ = 1.0vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 8nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switchin

 8.2. Size:2495K  maple semi
 slf65r380e7c.pdf pdf_icon

SLF65R420S2

SLF65R380E7C650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 11A*, 650V, RDS(on),Typ = 320mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 22nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switch

 8.3. Size:766K  maple semi
 slf65r950s2.pdf pdf_icon

SLF65R420S2

SLF65R950S2650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 5A, 650V, RDS(on) = 950m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingperformance, and withstand h

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... SLF5N65S , SLP60R190S2 , SLF60R190S2 , SLP60R380S2 , SLF60R380S2 , SLP60R850S2 , SLF60R850S2 , SLP65R420S2 , IRLB4132 , SLP70R420S2 , SLF70R420S2 , SLP70R600S2 , SLF70R600S2 , SLP740UZ , SLF740UZ , SLP7N60C , SLF7N60C .

History: ELM32403LA | ZXMN2A02X8TA | SWF13N60D

 

 
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