SLP7N70C Todos los transistores

 

SLP7N70C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SLP7N70C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 220 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 23.2 nC
   trⓘ - Tiempo de subida: 35.5 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.8 Ohm
   Paquete / Cubierta: TO220
 

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SLP7N70C Datasheet (PDF)

 ..1. Size:1248K  maple semi
 slp7n70c slf7n70c.pdf pdf_icon

SLP7N70C

SLP7N70C / SLF7N70C700V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 7.0A, 700V, RDS(on)typ = 1.5@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 23 nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching

 9.1. Size:301K  maple semi
 slp7n65c slf7n65c.pdf pdf_icon

SLP7N70C

SLP7N65C/SLF7N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 7.0A, 650V, RDS(on) typ. = 1.2@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 25nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingp

 9.2. Size:353K  maple semi
 slp7n80c slf7n80c.pdf pdf_icon

SLP7N70C

SLP7N80C/SLF7N80CSLP7N80C/SLF7N80C800V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 7.0A, 800V, RDS(on) = 1.9@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 40nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching Fast

 9.3. Size:360K  maple semi
 slp7n60c slf7n60c.pdf pdf_icon

SLP7N70C

SLP7N60C / SLF7N60C600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 7.0A, 600V, RDS(on)Typ. = 1.0@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 25nC)This advanced technology has been especially tailored to - High ruggednessminimize on-state resistance, provide superior switching - Fast switching

MOSTRAR MÁS

Otros transistores... SLP70R600S2 , SLF70R600S2 , SLP740UZ , SLF740UZ , SLP7N60C , SLF7N60C , SLP7N65C , SLF7N65C , 4435 , SLF7N70C , SLP7N80C , SLF7N80C , SLP80R240SJ , SLF80R240SJ , SLB80R240SJ , SLP8N60C , SLF8N60C .

 

 
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