SLP7N70C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SLP7N70C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 220 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 23.2 nC
   trⓘ - Tiempo de subida: 35.5 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.8 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET SLP7N70C

SLP7N70C Datasheet (PDF)

..1. Size:1248K maple semi
slp7n70c slf7n70c.pdf

SLP7N70C / SLF7N70C700V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 7.0A, 700V, RDS(on)typ = 1.5@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 23 nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching

9.1. Size:301K maple semi
slp7n65c slf7n65c.pdf

SLP7N65C/SLF7N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 7.0A, 650V, RDS(on) typ. = 1.2@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 25nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingp

9.2. Size:353K maple semi
slp7n80c slf7n80c.pdf

SLP7N80C/SLF7N80CSLP7N80C/SLF7N80C800V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 7.0A, 800V, RDS(on) = 1.9@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 40nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching Fast

9.3. Size:360K maple semi
slp7n60c slf7n60c.pdf

SLP7N60C / SLF7N60C600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 7.0A, 600V, RDS(on)Typ. = 1.0@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 25nC)This advanced technology has been especially tailored to - High ruggednessminimize on-state resistance, provide superior switching - Fast switching

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: BFS28R

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