SLP7N70C Datasheet. Specs and Replacement
Type Designator: SLP7N70C 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35.5 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: TO220
SLP7N70C substitution
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SLP7N70C datasheet
slp7n70c slf7n70c.pdf
SLP7N70C / SLF7N70C 700V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7.0A, 700V, RDS(on)typ = 1.5 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 23 nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching ... See More ⇒
slp7n65c slf7n65c.pdf
SLP7N65C/SLF7N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7.0A, 650V, RDS(on) typ. = 1.2 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 25nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching p... See More ⇒
slp7n80c slf7n80c.pdf
SLP7N80C/SLF7N80C SLP7N80C/SLF7N80C 800V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7.0A, 800V, RDS(on) = 1.9 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 40nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching Fast ... See More ⇒
slp7n60c slf7n60c.pdf
SLP7N60C / SLF7N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7.0A, 600V, RDS(on)Typ. = 1.0 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 25nC) This advanced technology has been especially tailored to - High ruggedness minimize on-state resistance, provide superior switching - Fast switching ... See More ⇒
Detailed specifications: SLP70R600S2, SLF70R600S2, SLP740UZ, SLF740UZ, SLP7N60C, SLF7N60C, SLP7N65C, SLF7N65C, 5N65, SLF7N70C, SLP7N80C, SLF7N80C, SLP80R240SJ, SLF80R240SJ, SLB80R240SJ, SLP8N60C, SLF8N60C
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