All MOSFET. SLP7N70C Datasheet

 

SLP7N70C Datasheet and Replacement


   Type Designator: SLP7N70C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35.5 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO220
 

 SLP7N70C substitution

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SLP7N70C Datasheet (PDF)

 ..1. Size:1248K  maple semi
 slp7n70c slf7n70c.pdf pdf_icon

SLP7N70C

SLP7N70C / SLF7N70C700V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 7.0A, 700V, RDS(on)typ = 1.5@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 23 nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching

 9.1. Size:301K  maple semi
 slp7n65c slf7n65c.pdf pdf_icon

SLP7N70C

SLP7N65C/SLF7N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 7.0A, 650V, RDS(on) typ. = 1.2@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 25nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingp

 9.2. Size:353K  maple semi
 slp7n80c slf7n80c.pdf pdf_icon

SLP7N70C

SLP7N80C/SLF7N80CSLP7N80C/SLF7N80C800V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 7.0A, 800V, RDS(on) = 1.9@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 40nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching Fast

 9.3. Size:360K  maple semi
 slp7n60c slf7n60c.pdf pdf_icon

SLP7N70C

SLP7N60C / SLF7N60C600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 7.0A, 600V, RDS(on)Typ. = 1.0@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 25nC)This advanced technology has been especially tailored to - High ruggednessminimize on-state resistance, provide superior switching - Fast switching

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Datasheet: SLP70R600S2 , SLF70R600S2 , SLP740UZ , SLF740UZ , SLP7N60C , SLF7N60C , SLP7N65C , SLF7N65C , IRF4905 , SLF7N70C , SLP7N80C , SLF7N80C , SLP80R240SJ , SLF80R240SJ , SLB80R240SJ , SLP8N60C , SLF8N60C .

History: BRF65R280C | 2SK1808 | NTTFS6H850N | VNS008A | IRF7467TR | ASDM4410S | AP60T10GP

Keywords - SLP7N70C MOSFET datasheet

 SLP7N70C cross reference
 SLP7N70C equivalent finder
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