SLF7N80C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SLF7N80C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 56 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 100 nS
Cossⓘ - Capacitancia de salida: 165 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.9 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de SLF7N80C MOSFET
SLF7N80C Datasheet (PDF)
slp7n80c slf7n80c.pdf

SLP7N80C/SLF7N80CSLP7N80C/SLF7N80C800V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 7.0A, 800V, RDS(on) = 1.9@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 40nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching Fast
slp7n65c slf7n65c.pdf

SLP7N65C/SLF7N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 7.0A, 650V, RDS(on) typ. = 1.2@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 25nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingp
slp7n60c slf7n60c.pdf

SLP7N60C / SLF7N60C600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 7.0A, 600V, RDS(on)Typ. = 1.0@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 25nC)This advanced technology has been especially tailored to - High ruggednessminimize on-state resistance, provide superior switching - Fast switching
slp7n70c slf7n70c.pdf

SLP7N70C / SLF7N70C700V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 7.0A, 700V, RDS(on)typ = 1.5@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 23 nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching
Otros transistores... SLF740UZ , SLP7N60C , SLF7N60C , SLP7N65C , SLF7N65C , SLP7N70C , SLF7N70C , SLP7N80C , IRLZ44N , SLP80R240SJ , SLF80R240SJ , SLB80R240SJ , SLP8N60C , SLF8N60C , SLP8N65C , SLF8N65C , SLW18N50C .
History: APT24M80B | HM25N06Q | PTP10N40B | SIB433EDK | DH1K1N10
History: APT24M80B | HM25N06Q | PTP10N40B | SIB433EDK | DH1K1N10



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