SLF7N80C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SLF7N80C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 100 nS

Cossⓘ - Capacitancia de salida: 165 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.9 Ohm

Encapsulados: TO220F

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SLF7N80C datasheet

 ..1. Size:353K  maple semi
 slp7n80c slf7n80c.pdf pdf_icon

SLF7N80C

SLP7N80C/SLF7N80C SLP7N80C/SLF7N80C 800V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7.0A, 800V, RDS(on) = 1.9 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 40nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching Fast

 9.1. Size:301K  maple semi
 slp7n65c slf7n65c.pdf pdf_icon

SLF7N80C

SLP7N65C/SLF7N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7.0A, 650V, RDS(on) typ. = 1.2 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 25nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching p

 9.2. Size:360K  maple semi
 slp7n60c slf7n60c.pdf pdf_icon

SLF7N80C

SLP7N60C / SLF7N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7.0A, 600V, RDS(on)Typ. = 1.0 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 25nC) This advanced technology has been especially tailored to - High ruggedness minimize on-state resistance, provide superior switching - Fast switching

 9.3. Size:1248K  maple semi
 slp7n70c slf7n70c.pdf pdf_icon

SLF7N80C

SLP7N70C / SLF7N70C 700V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7.0A, 700V, RDS(on)typ = 1.5 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 23 nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching

MOSTRAR MÁS

Otros transistores... SLF740UZ, SLP7N60C, SLF7N60C, SLP7N65C, SLF7N65C, SLP7N70C, SLF7N70C, SLP7N80C, AON6380, SLP80R240SJ, SLF80R240SJ, SLB80R240SJ, SLP8N60C, SLF8N60C, SLP8N65C, SLF8N65C, SLW18N50C