SLF7N80C Specs and Replacement

Type Designator: SLF7N80C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm

Package: TO220F

SLF7N80C substitution

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SLF7N80C datasheet

 ..1. Size:353K  maple semi
 slp7n80c slf7n80c.pdf pdf_icon

SLF7N80C

SLP7N80C/SLF7N80C SLP7N80C/SLF7N80C 800V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7.0A, 800V, RDS(on) = 1.9 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 40nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching Fast ... See More ⇒

 9.1. Size:301K  maple semi
 slp7n65c slf7n65c.pdf pdf_icon

SLF7N80C

SLP7N65C/SLF7N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7.0A, 650V, RDS(on) typ. = 1.2 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 25nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching p... See More ⇒

 9.2. Size:360K  maple semi
 slp7n60c slf7n60c.pdf pdf_icon

SLF7N80C

SLP7N60C / SLF7N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7.0A, 600V, RDS(on)Typ. = 1.0 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 25nC) This advanced technology has been especially tailored to - High ruggedness minimize on-state resistance, provide superior switching - Fast switching ... See More ⇒

 9.3. Size:1248K  maple semi
 slp7n70c slf7n70c.pdf pdf_icon

SLF7N80C

SLP7N70C / SLF7N70C 700V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7.0A, 700V, RDS(on)typ = 1.5 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 23 nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching ... See More ⇒

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Detailed specifications: SLF740UZ, SLP7N60C, SLF7N60C, SLP7N65C, SLF7N65C, SLP7N70C, SLF7N70C, SLP7N80C, AON6380, SLP80R240SJ, SLF80R240SJ, SLB80R240SJ, SLP8N60C, SLF8N60C, SLP8N65C, SLF8N65C, SLW18N50C

Keywords - SLF7N80C MOSFET specs

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