S-LBSS84WT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: S-LBSS84WT1G
Código: PD
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.225 W
Voltaje máximo drenador - fuente |Vds|: 50 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 0.13 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Tiempo de subida (tr): 8.6 nS
Conductancia de drenaje-sustrato (Cd): 4.8 pF
Resistencia entre drenaje y fuente RDS(on): 5 Ohm
Paquete / Cubierta: SOT323
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S-LBSS84WT1G Datasheet (PDF)
lbss84wt1g s-lbss84wt1g.pdf
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LBSS84LT1GS-LBSS84LT1GPower MOSFET130 mA, 50V PChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.Energy efficient2. DEVICE MARKING AND O
lbss84dw1t1g s-lbss84dw1t1g.pdf
LESHAN RADIO COMPANY, LTD.Power MOSFET mAmps, 50 Vots130PChannel SC88LBSS84DW1T1GS-LBSS84DW1T1GThese miniature surface mount MOSFETs reduce power lossconserve energy, making this device ideal for use in small powermanagement circuitry. Typical applications are dcdc converters, loadswitching, power management in portable and batterypoweredproducts such as compute
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LBSS84ELT1GS-LBSS84ELT1GPower MOSFET 60V PChannel1. FEATURESAdvanced trench cell design.High speed switch.G-S ESD Protected: 1000VPb-Free Package is available.We declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change re
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