S-LBSS84WT1G MOSFET. Datasheet pdf. Equivalent
Type Designator: S-LBSS84WT1G
Marking Code: PD
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 0.13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 8.6 nS
Cossⓘ - Output Capacitance: 4.8 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: SOT323
S-LBSS84WT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
S-LBSS84WT1G Datasheet (PDF)
lbss84wt1g s-lbss84wt1g.pdf
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