2N65F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N65F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 23 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 25 nS
Cossⓘ - Capacitancia de salida: 45 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.4 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de 2N65F MOSFET
- Selecciónⓘ de transistores por parámetros
2N65F datasheet
0.1. Size:586K 1
svf12n65f svf12n65t.pdf 
SVF12N65T/F_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch
0.2. Size:1489K jilin sino
jcs12n65fei jcs12n65bei jcs12n65sei jcs12n65cei.pdf
N R N-CHANNEL MOSFET JCS12N65EI Package MAIN CHARACTERISTICS ID 12A VDSS 650V Rdson-max 0.9 Vgs=10V Qg-Typ 30nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE
0.4. Size:1410K jilin sino
jcs12n65bt jcs12n65st jcs12n65ct jcs12n65ft.pdf
N R N-CHANNEL MOSFET JCS12N65T Package MAIN CHARACTERISTICS ID 12.0A VDSS 650 V Rdson-max 0.78 @Vgs=10V Qg-typ 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
0.5. Size:1571K jilin sino
jcs2n65v jcs2n65r jcs2n65c jcs2n65f.pdf
N R N-CHANNEL MOSFET JCS2N65C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 650 V Rdson_max 5.5 Vgs=10V Qg-typ 8.4 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
0.7. Size:990K jilin sino
jcs2n65fc.pdf
N R N-CHANNEL MOSFET JCS2N65C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 650 V Rdson_max 5.5 Vgs=10V Qg-typ 8.4 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
0.8. Size:407K cystek
mtn12n65fp.pdf
Spec. No. C802FP Issued Date 2010.01.08 CYStech Electronics Corp. Revised Date 2012.01.13 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 0.6 (typ.) MTN12N65FP ID 12A Description The MTN12N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on
0.9. Size:273K cystek
mtn2n65fp.pdf
Spec. No. C722FP Issued Date 2010.03.15 CYStech Electronics Corp. Revised Date 2012.11.08 Page No. 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 5.8 (typ.) MTN2N65FP ID 1.8A Description The MTN2N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-
0.10. Size:433K silikron
ssf12n65f.pdf
SSF12N65F Main Product Characteristics VDSS 650V RDS(on) 0.68 (typ.) ID 12A Marking and pin TO220F Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
0.11. Size:269K crhj
cs12n65f a9r.pdf
Silicon N-Channel Power MOSFET R CS12N65F A9R General Description VDSS 650 V CS12N65F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25 ) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.66 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
0.12. Size:342K crhj
cs12n65f a9h.pdf
Silicon N-Channel Power MOSFET R CS12N65F A9H VDSS 650 V General Description ID 12 A CS12N65F A9H, the silicon N-channel Enhanced PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.54 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
0.13. Size:733K crhj
cs2n65f a9hy.pdf
Silicon N-Channel Power MOSFET R CS2N65F A9HY General Description VDSS 650 V CS2N65F A9HY, the silicon N-channel Enhanced ID 2.0 A PD (TC=25 ) 27 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
0.14. Size:127K jdsemi
cm12n65f.pdf
R CM12N65F www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LD E 2 1 2
0.15. Size:145K jdsemi
cm2n65f.pdf
R CM2N65F www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS
0.16. Size:1489K kexin
kx12n65f.pdf
DIP Type MOSFET N-Channel MOSFET KX12N65F TO-220F Unit mm 10.16 0.20 3.18 0.10 2.54 0.20 (7.00) (0.70) Features VDS (V) = 650V (1.00x45 ) ID = 12 A (VGS = 10V) RDS(ON) 850m (VGS = 10V) 1 2 3 MAX1.47 High ruggedness 0.80 0.10 D #1 0.35 0.10 +0.10 0.50 0.05 2.76 0.20 2.54TYP 2.54TYP [2.54 0.20] [2.54 0.20] 9.40 0.20 G 1. Gate 2. Drain
0.20. Size:542K silan
svf2n65f.pdf
SVF2N65F_Datasheet 2A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N65F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching
0.21. Size:984K slkor
sl2n65f.pdf
SL2N65F N-Channel Power MOSFET Features 2.0A, 650V, R =4.2 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Schematic diagram Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction TO-220F Absolute Maximum Ratings(Tc=25 C unless otherwise
0.22. Size:311K ubiq
qm12n65f.pdf
QM12N65F 1 2011-03-03 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM12N65F is the highest performance N-ch MOSFETs with specialized high voltage BVDSS RDSON ID technology, which provide excellent RDSON and 650V 0.8 12A gate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM12N65F me
0.23. Size:222K wuxi china
cs12n65fa9h.pdf
Silicon N-Channel Power MOSFET R CS12N65F A9H VDSS 650 V General Description ID 12 A CS12N65F A9H, the silicon N-channel Enhanced PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.54 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
0.24. Size:269K wuxi china
cs12n65fa9r.pdf
Silicon N-Channel Power MOSFET R CS12N65F A9R General Description VDSS 650 V CS12N65F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25 ) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.66 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
0.25. Size:733K wuxi china
cs2n65fa9hy.pdf
Silicon N-Channel Power MOSFET R CS2N65F A9HY General Description VDSS 650 V CS2N65F A9HY, the silicon N-channel Enhanced ID 2.0 A PD (TC=25 ) 27 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
0.26. Size:613K wuxi china
cs2n65fa9.pdf
Silicon N-Channel Power MOSFET R CS2N65F A9 General Description VDSS 650 V CS2N65F A9, the silicon N-channel Enhanced ID 2.0 A PD (TC=25 ) 27 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
0.27. Size:412K convert
cs12n65f cs12n65p.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. CS12N65F,CS12N65P 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS12N65F TO-220F CS12N65F CS
0.28. Size:702K convert
cs2n65f cs2n65d cs2n65u.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. CS2N65F,CS2N65D,CS2N65U 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS2N65F TO-220F CS2N65F
0.29. Size:370K convert
cs12n65ff.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. CS12N65FF 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS12N65FF TO-220F CS12N65FF Absolute
0.30. Size:1752K first semi
fir12n65fg.pdf
FIR12N65FG Advanced N-Ch Power MOSFET PIN Connection TO-220F Switchng Regulator Application Features High Voltage BVDSS=650V(Min.) Low Crss Crss=14.6pF(Typ.) G Low gate charge Qg=41nC(Typ.) D S Low RDS(on) RDS(on)=0.65 (Max.) D G S Marking Diagram Y = Year A = Assembly Location YAWW WW = Work Week FIR12N65F FIR12N65F = Specific Device C
0.31. Size:367K cn hmsemi
hm12n65 hm12n65f.pdf
HM12N65 / HM12N65F 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 12.0A, 650V, RDS(on) = 0.75 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 52nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superior switching Fast w
0.32. Size:868K cn fx-semi
fxn12n65f.pdf
FuXin Semiconductor Co., Ltd. FXN12N65F Series Rev.A General Description Features The FXN12N65F uses advanced Silicon s MOSFET Technology, which V = 650V DS provides high performance in on-state resistance, fast switching ID = 12A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in ind
0.33. Size:803K cn marching-power
mpva12n65f.pdf
MPVA12N65F Power MOSFET MPSW60M041 FEATURES APPLICATIONS l BVDSS 650V, ID=12A l Switch Mode Power Supply (SMPS) l RDS(on) 0.8 (Max) @VGS=10V l Uninterruptible Power Supply (UPS) l Very Low FOM (RDS(on) *Qg) l Power Factor Correction (PFC) l Excellent stability and uniformity l AC to DC Converters D G TO-220F S Ordering Information Type NO. Marking Package Code MPVA12N6
0.34. Size:478K cn haohai electr
h12n65p h12n65f.pdf
12N65 Series N-Channel MOSFET 12A, 650V, N H FQP12N65C H12N65P P TO-220AB 12N65 HAOHAI 50Pcs 1000Pcs 5000Pcs FQPF12N65C H12N65F F TO-220FP 12N65 Series Pin Assignment Features ID=12A Originative New Des
0.36. Size:1505K cn apm
ap12n65f ap12n65p.pdf
AP12N65FIP 650V N-Channel Enhancement Mode MOSFET Description The AP12N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
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