2N65F - описание и поиск аналогов

 ..1. Size:143K  jh
 2n65 2n65f 2n65e 2n65d 2n65n 2n65m.pdf 

R 2N65 S E M I C O N D U C T O R 650V N-Channel Power MOSFET FEATURES PRODUCT SUMMARY RDS(ON)

 0.1. Size:586K  1
 svf12n65f svf12n65t.pdf 

SVF12N65T/F_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch

 0.2. Size:1489K  jilin sino
 jcs12n65fei jcs12n65bei jcs12n65sei jcs12n65cei.pdf 

N R N-CHANNEL MOSFET JCS12N65EI Package MAIN CHARACTERISTICS ID 12A VDSS 650V Rdson-max 0.9 Vgs=10V Qg-Typ 30nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE

 0.3. Size:1225K  jilin sino
 jcs2n65vb jcs2n65rb jcs2n65cb jcs2n65fb jcs2n65mb jcs2n65mfb.pdf 

N R N-CHANNEL MOSFET JCS2N65B MAIN CHARACTERISTICS Package ID 2.0 A VDSS 650 V Rdson Vgs=10V 5.0 -MAX Qg-typ 5.9 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

 0.4. Size:1410K  jilin sino
 jcs12n65bt jcs12n65st jcs12n65ct jcs12n65ft.pdf 

N R N-CHANNEL MOSFET JCS12N65T Package MAIN CHARACTERISTICS ID 12.0A VDSS 650 V Rdson-max 0.78 @Vgs=10V Qg-typ 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

 0.5. Size:1571K  jilin sino
 jcs2n65v jcs2n65r jcs2n65c jcs2n65f.pdf 

N R N-CHANNEL MOSFET JCS2N65C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 650 V Rdson_max 5.5 Vgs=10V Qg-typ 8.4 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

 0.6. Size:543K  jilin sino
 jcs12n65f.pdf 

 0.7. Size:990K  jilin sino
 jcs2n65fc.pdf 

N R N-CHANNEL MOSFET JCS2N65C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 650 V Rdson_max 5.5 Vgs=10V Qg-typ 8.4 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

 0.8. Size:407K  cystek
 mtn12n65fp.pdf 

Spec. No. C802FP Issued Date 2010.01.08 CYStech Electronics Corp. Revised Date 2012.01.13 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 0.6 (typ.) MTN12N65FP ID 12A Description The MTN12N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on

 0.9. Size:273K  cystek
 mtn2n65fp.pdf 

Spec. No. C722FP Issued Date 2010.03.15 CYStech Electronics Corp. Revised Date 2012.11.08 Page No. 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 5.8 (typ.) MTN2N65FP ID 1.8A Description The MTN2N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

 0.10. Size:433K  silikron
 ssf12n65f.pdf 

SSF12N65F Main Product Characteristics VDSS 650V RDS(on) 0.68 (typ.) ID 12A Marking and pin TO220F Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 0.11. Size:269K  crhj
 cs12n65f a9r.pdf 

Silicon N-Channel Power MOSFET R CS12N65F A9R General Description VDSS 650 V CS12N65F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25 ) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.66 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 0.12. Size:342K  crhj
 cs12n65f a9h.pdf 

Silicon N-Channel Power MOSFET R CS12N65F A9H VDSS 650 V General Description ID 12 A CS12N65F A9H, the silicon N-channel Enhanced PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.54 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 0.13. Size:733K  crhj
 cs2n65f a9hy.pdf 

Silicon N-Channel Power MOSFET R CS2N65F A9HY General Description VDSS 650 V CS2N65F A9HY, the silicon N-channel Enhanced ID 2.0 A PD (TC=25 ) 27 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 0.14. Size:127K  jdsemi
 cm12n65f.pdf 

R CM12N65F www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LD E 2 1 2

 0.15. Size:145K  jdsemi
 cm2n65f.pdf 

R CM2N65F www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS

 0.16. Size:1489K  kexin
 kx12n65f.pdf 

DIP Type MOSFET N-Channel MOSFET KX12N65F TO-220F Unit mm 10.16 0.20 3.18 0.10 2.54 0.20 (7.00) (0.70) Features VDS (V) = 650V (1.00x45 ) ID = 12 A (VGS = 10V) RDS(ON) 850m (VGS = 10V) 1 2 3 MAX1.47 High ruggedness 0.80 0.10 D #1 0.35 0.10 +0.10 0.50 0.05 2.76 0.20 2.54TYP 2.54TYP [2.54 0.20] [2.54 0.20] 9.40 0.20 G 1. Gate 2. Drain

 0.17. Size:394K  silan
 svf12n65f svf12n65k svf12n65s svf12n65str.pdf 

 0.18. Size:444K  silan
 svf12n65t svf12n65f.pdf 

SVF12N65T/F 12A 650V N 2 SVF12N65T/F N MOS F-CellTM VDMOS 1 3

 0.19. Size:479K  silan
 svf2n65f svf2n65n svf2n65mj svf2n65d.pdf 

SVF2N65F/N/MJ/D 2A 650V N SVF2N65F/N/MJ/D N MOS F-CellTM VDMOS

 0.20. Size:542K  silan
 svf2n65f.pdf 

SVF2N65F_Datasheet 2A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N65F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching

 0.21. Size:984K  slkor
 sl2n65f.pdf 

SL2N65F N-Channel Power MOSFET Features 2.0A, 650V, R =4.2 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Schematic diagram Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction TO-220F Absolute Maximum Ratings(Tc=25 C unless otherwise

 0.22. Size:311K  ubiq
 qm12n65f.pdf 

QM12N65F 1 2011-03-03 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM12N65F is the highest performance N-ch MOSFETs with specialized high voltage BVDSS RDSON ID technology, which provide excellent RDSON and 650V 0.8 12A gate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM12N65F me

 0.23. Size:222K  wuxi china
 cs12n65fa9h.pdf 

Silicon N-Channel Power MOSFET R CS12N65F A9H VDSS 650 V General Description ID 12 A CS12N65F A9H, the silicon N-channel Enhanced PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.54 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 0.24. Size:269K  wuxi china
 cs12n65fa9r.pdf 

Silicon N-Channel Power MOSFET R CS12N65F A9R General Description VDSS 650 V CS12N65F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25 ) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.66 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 0.25. Size:733K  wuxi china
 cs2n65fa9hy.pdf 

Silicon N-Channel Power MOSFET R CS2N65F A9HY General Description VDSS 650 V CS2N65F A9HY, the silicon N-channel Enhanced ID 2.0 A PD (TC=25 ) 27 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 0.26. Size:613K  wuxi china
 cs2n65fa9.pdf 

Silicon N-Channel Power MOSFET R CS2N65F A9 General Description VDSS 650 V CS2N65F A9, the silicon N-channel Enhanced ID 2.0 A PD (TC=25 ) 27 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 0.27. Size:412K  convert
 cs12n65f cs12n65p.pdf 

nvert Suzhou Convert Semiconductor Co ., Ltd. CS12N65F,CS12N65P 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS12N65F TO-220F CS12N65F CS

 0.28. Size:702K  convert
 cs2n65f cs2n65d cs2n65u.pdf 

nvert Suzhou Convert Semiconductor Co ., Ltd. CS2N65F,CS2N65D,CS2N65U 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS2N65F TO-220F CS2N65F

 0.29. Size:370K  convert
 cs12n65ff.pdf 

nvert Suzhou Convert Semiconductor Co ., Ltd. CS12N65FF 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS12N65FF TO-220F CS12N65FF Absolute

 0.30. Size:1752K  first semi
 fir12n65fg.pdf 

FIR12N65FG Advanced N-Ch Power MOSFET PIN Connection TO-220F Switchng Regulator Application Features High Voltage BVDSS=650V(Min.) Low Crss Crss=14.6pF(Typ.) G Low gate charge Qg=41nC(Typ.) D S Low RDS(on) RDS(on)=0.65 (Max.) D G S Marking Diagram Y = Year A = Assembly Location YAWW WW = Work Week FIR12N65F FIR12N65F = Specific Device C

 0.31. Size:367K  cn hmsemi
 hm12n65 hm12n65f.pdf 

HM12N65 / HM12N65F 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 12.0A, 650V, RDS(on) = 0.75 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 52nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superior switching Fast w

 0.32. Size:868K  cn fx-semi
 fxn12n65f.pdf 

FuXin Semiconductor Co., Ltd. FXN12N65F Series Rev.A General Description Features The FXN12N65F uses advanced Silicon s MOSFET Technology, which V = 650V DS provides high performance in on-state resistance, fast switching ID = 12A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in ind

 0.33. Size:803K  cn marching-power
 mpva12n65f.pdf 

MPVA12N65F Power MOSFET MPSW60M041 FEATURES APPLICATIONS l BVDSS 650V, ID=12A l Switch Mode Power Supply (SMPS) l RDS(on) 0.8 (Max) @VGS=10V l Uninterruptible Power Supply (UPS) l Very Low FOM (RDS(on) *Qg) l Power Factor Correction (PFC) l Excellent stability and uniformity l AC to DC Converters D G TO-220F S Ordering Information Type NO. Marking Package Code MPVA12N6

 0.34. Size:478K  cn haohai electr
 h12n65p h12n65f.pdf 

12N65 Series N-Channel MOSFET 12A, 650V, N H FQP12N65C H12N65P P TO-220AB 12N65 HAOHAI 50Pcs 1000Pcs 5000Pcs FQPF12N65C H12N65F F TO-220FP 12N65 Series Pin Assignment Features ID=12A Originative New Des

 0.35. Size:818K  chongqing pingwei
 12n65 12n65f 12n65b 12n65h.pdf 

 0.36. Size:1505K  cn apm
 ap12n65f ap12n65p.pdf 

AP12N65FIP 650V N-Channel Enhancement Mode MOSFET Description The AP12N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.