2N65F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2N65F
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 23 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 2 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 5.7 nC
Время нарастания (tr): 25 ns
Выходная емкость (Cd): 45 pf
Сопротивление сток-исток открытого транзистора (Rds): 4.4 Ohm
Тип корпуса: TO220F
2N65F Datasheet (PDF)
2n65 2n65f 2n65e 2n65d 2n65n 2n65m.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
R2N65S E M I C O N D U C T O R650V N-Channel Power MOSFETFEATURESPRODUCT SUMMARYRDS(ON)
svf12n65f svf12n65t.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SVF12N65T/F_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch
jcs12n65fei jcs12n65bei jcs12n65sei jcs12n65cei.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
N RN-CHANNEL MOSFET JCS12N65EI Package MAIN CHARACTERISTICS ID 12A VDSS 650V Rdson-max 0.9 Vgs=10V Qg-Typ 30nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE
jcs2n65vb jcs2n65rb jcs2n65cb jcs2n65fb jcs2n65mb jcs2n65mfb.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
N RN-CHANNEL MOSFET JCS2N65B MAIN CHARACTERISTICS Package ID 2.0 A VDSS 650 V RdsonVgs=10V 5.0 -MAX Qg-typ 5.9 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
jcs12n65bt jcs12n65st jcs12n65ct jcs12n65ft.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
N R N-CHANNEL MOSFET JCS12N65T Package MAIN CHARACTERISTICS ID 12.0A VDSS 650 V Rdson-max 0.78 @Vgs=10V Qg-typ 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
jcs2n65v jcs2n65r jcs2n65c jcs2n65f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
N RN-CHANNEL MOSFET JCS2N65C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 650 V Rdson_max5.5 Vgs=10V Qg-typ 8.4 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
jcs12n65f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
N N- CHANNEL MOSFET RJCS12N65FC MAIN CHARACTERISTICS Package ID 12 A VDSS 650 V Rdson@Vgs=10V 0.52 Qg 30 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS
jcs2n65fc.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
N RN-CHANNEL MOSFET JCS2N65C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 650 V Rdson_max5.5 Vgs=10V Qg-typ 8.4 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
mtn12n65fp.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Spec. No. : C802FP Issued Date : 2010.01.08 CYStech Electronics Corp.Revised Date : 2012.01.13 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 0.6 (typ.) MTN12N65FP ID : 12A Description The MTN12N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on
mtn2n65fp.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Spec. No. : C722FP Issued Date : 2010.03.15 CYStech Electronics Corp.Revised Date :2012.11.08 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 5.8 (typ.) MTN2N65FP ID : 1.8A Description The MTN2N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-
ssf12n65f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SSF12N65FMain Product Characteristics: VDSS 650V RDS(on) 0.68(typ.) ID 12AMarking and pin TO220FSchematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
cs12n65f a9r.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Silicon N-Channel Power MOSFET R CS12N65F A9R General Description VDSS 650 V CS12N65F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.66 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
cs12n65f a9h.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Silicon N-Channel Power MOSFET R CS12N65F A9H VDSS 650 V General Description ID 12 A CS12N65F A9H, the silicon N-channel Enhanced PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.54 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
cs2n65f a9hy.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Silicon N-Channel Power MOSFET R CS2N65F A9HY General Description VDSS 650 V CS2N65F A9HY, the silicon N-channel Enhanced ID 2.0 A PD (TC=25) 27 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
cm12n65f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
RCM12N65F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE2 1 2
cm2n65f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
RCM2N65F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS
kx12n65f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
DIP Type MOSFETN-Channel MOSFETKX12N65FTO-220FUnit:mm10.16 0.20 3.18 0.10 2.54 0.20(7.00) (0.70) Features VDS (V) = 650V(1.00x45 ) ID = 12 A (VGS = 10V) RDS(ON) 850m (VGS = 10V)1 2 3MAX1.47 High ruggedness0.80 0.10D#10.35 0.10 +0.100.50 0.05 2.76 0.202.54TYP 2.54TYP[2.54 0.20] [2.54 0.20]9.40 0.20G1. Gate 2. Drain
svf12n65f svf12n65k svf12n65s svf12n65str.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SVF12N65F/K/S 12A650V N 2SVF12N65F/K/S N MOS F-CellTM VDMOS 113 TO-263-2L3
svf12n65t svf12n65f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SVF12N65T/F 12A650V N 2SVF12N65T/F NMOSF-CellTMVDMOS 1 3
svf2n65f svf2n65n svf2n65mj svf2n65d.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SVF2N65F/N/MJ/D 2A650V N SVF2N65F/N/MJ/D N MOS F-CellTM VDMOS
svf2n65f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SVF2N65F_Datasheet 2A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N65F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching
sl2n65f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SL2N65FN-Channel Power MOSFET Features 2.0A, 650V, R =4.2@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche TestedSchematic diagram Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionTO-220FAbsolute Maximum Ratings(Tc=25C unless otherwise
qm12n65f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
QM12N65F 1 2011-03-03 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM12N65F is the highest performance N-ch MOSFETs with specialized high voltageBVDSS RDSON ID technology, which provide excellent RDSON and 650V 0.8 12Agate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM12N65F me
cs12n65fa9h.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Silicon N-Channel Power MOSFET R CS12N65F A9H VDSS 650 V General Description ID 12 A CS12N65F A9H, the silicon N-channel Enhanced PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.54 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
cs12n65fa9r.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Silicon N-Channel Power MOSFET R CS12N65F A9R General Description VDSS 650 V CS12N65F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.66 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
cs2n65fa9hy.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Silicon N-Channel Power MOSFET R CS2N65F A9HY General Description VDSS 650 V CS2N65F A9HY, the silicon N-channel Enhanced ID 2.0 A PD (TC=25) 27 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
cs2n65fa9.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Silicon N-Channel Power MOSFET R CS2N65F A9 General Description VDSS 650 V CS2N65F A9, the silicon N-channel Enhanced ID 2.0 A PD (TC=25) 27 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs12n65f cs12n65p.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
nvertSuzhou Convert Semiconductor Co ., Ltd.CS12N65F,CS12N65P650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS12N65F TO-220F CS12N65FCS
cs2n65f cs2n65d cs2n65u.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
nvertSuzhou Convert Semiconductor Co ., Ltd.CS2N65F,CS2N65D,CS2N65U650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS2N65F TO-220F CS2N65F
cs12n65ff.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
nvertSuzhou Convert Semiconductor Co ., Ltd.CS12N65FF650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS12N65FF TO-220F CS12N65FFAbsolute
fir12n65fg.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
FIR12N65FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FSwitchng Regulator ApplicationFeatures High Voltage : BVDSS=650V(Min.) Low Crss : Crss=14.6pF(Typ.) G Low gate charge : Qg=41nC(Typ.) D S Low RDS(on) : RDS(on)=0.65(Max.) D G S Marking DiagramY = YearA = Assembly LocationYAWWWW = Work WeekFIR12N65FFIR12N65F = Specific Device C
hm12n65 hm12n65f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
HM12N65 / HM12N65F650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 12.0A, 650V, RDS(on) = 0.75 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 52nC)This advanced technology has been espe cially tailored to High ruggednessminimize o n-state r esistance, pr ovide superior switching Fast w
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .