5N65M Todos los transistores

 ..1. Size:1255K  jh
 5n65 5n65f 5n65d 5n65e 5n65m 5n65n.pdf

R 5N65 5N65F 5N65D 5N65E 5N65M 5N65N S E M I C O N D U C T O R 650V N-Channel Power MOSFET FEATURES PRODUCT SUMMARY RDS(ON)

 0.1. Size:944K  st
 ste145n65m5.pdf

STE145N65M5 N-channel 650 V, 0.012 typ., 143 A, MDmesh V Power MOSFET in a ISOTOP package Datasheet - preliminary data Features Order code VDS @Tjmax RDS(on) max ID STE145N65M5 710 V 0.015 143 A Very low RDS(on) Higher VDSS rating Higher dv/dt capability ISOTOP Excellent switching performance 100% avalanche tested Applications Figure 1. Internal sch

 0.2. Size:1268K  st
 stfw45n65m5 stwa45n65m5.pdf

STFW45N65M5, STW45N65M5, STWA45N65M5 N-channel 650 V, 35 A, 0.067 typ., MDmesh V Power MOSFETs in TO-3PF, TO-247 and TO-247 long leads packages Datasheet - production data Features Order codes VDS @ TJmax RDS(on) max ID STFW45N65M5 STW45N65M5 710 V 0.078 35 A 1 1 1 STWA45N65M5 3 3 2 2 1 1 Worldwide best RDS(on) * area TO-247 TO-3PF TO-247 long leads Hig

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 stl45n65m5.pdf

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 stb15n65m5 std15n65m5.pdf

STB15N65M5, STD15N65M5 Datasheet N-channel 650 V, 0.308 typ., 11 A MDmesh M5 Power MOSFETs in D2PAK and DPAK packages Features TAB TAB VDS @ RDS(on) max. ID Order code TJmax 3 2 2 1 3 STB15N65M5 1 710 V 0.34 11 A D2PAK DPAK STD15N65M5 Extremely low RDS(on) D(2, TAB) Low gate charge and input capacitance Excellent switching performance 100% aval

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 stb45n65m5 stf45n65m5 stp45n65m5.pdf

STB45N65M5, STF45N65M5, STP45N65M5 N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB 2 Order codes VDSS @ TJmax RDS(on) max ID 3 1 STB45N65M5 3 2 D2PAK 1 STF45N65M5 710 V 0.078 35 A TO-220FP STP45N65M5 TAB Worldwide best RDS(on) * area Higher VDSS rating and high dv/dt capa

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 stfw45n65m5 stw45n65m5 stwa45n65m5.pdf

STFW45N65M5, STW45N65M5, STWA45N65M5 N-channel 650 V, 35 A, 0.067 typ., MDmesh V Power MOSFETs in TO-3PF, TO-247 and TO-247 long leads packages Datasheet - production data Features Order codes VDS @ TJmax RDS(on) max ID STFW45N65M5 STW45N65M5 710 V 0.078 35 A 1 1 1 STWA45N65M5 3 3 2 2 1 1 Worldwide best RDS(on) * area TO-247 TO-3PF TO-247 long leads Hig

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 stb35n65m5 stf35n65m5 sti35n65m5 stp35n65m5 stw35n65m5.pdf

STB35N65M5, STF35N65M5, STI35N65M5 STP35N65M5, STW35N65M5 N-channel 650 V, 0.085 , 27 A, MDmesh V Power MOSFET in D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features VDSS @ Type RDS(on) max ID TJMAX 3 3 1 2 3 1 2 STB35N65M5 710 V

 0.8. Size:1336K  st
 stb45n65m5 stf45n65m5 stp45n65m5 stw45n65m5.pdf

STB45N65M5, STF45N65M5, STP45N65M5 STW45N65M5 N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data Features TAB 2 VDSS @ RDS(on) 3 Order code ID 1 TJmax max 3 2 D2PAK 1 STB45N65M5 TO-220FP TAB STF45N65M5 710 V

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 stl15n65m5.pdf

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 sty145n65m5.pdf

STY145N65M5 N-channel 650 V, 0.012 typ., 138 A, MDmesh V Power MOSFET in Max247 package Datasheet preliminary data Features VDSS Order code @TJmax RDS(on) max ID STY145N65M5 710 V

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 std15n65m5.pdf

STB15N65M5, STD15N65M5 N-channel 650 V, 0.308 typ., 11 A MDmesh V Power MOSFET in D2PAK and DPAK packages Datasheet production data Features VDS @ RDS(on) Order codes ID TJmax max TAB STB15N65M5 TAB 710 V

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 stf15n65m5 stfi15n65m5 stp15n65m5.pdf

STF15N65M5, STFI15N65M5, STP15N65M5 N-channel 650 V, 0.308 typ., 11 A MDmesh V Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages Datasheet production data Features VDS @ RDS(on) Order codes ID TJmax max 3 2 1 STF15N65M5 TO-220FP STFI15N65M5 710 V

 0.13. Size:1206K  truesemi
 tsd5n65m tsu5n65m.pdf

TSD5N65M/TSU5N65M 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 3.0A,650V,Max.RDS(on)=3.0 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 16nC) minimize on-state resistance, provide superior switching High ruggedness performance, and

 0.14. Size:1115K  truesemi
 tsp5n65m tsf5n65m.pdf

TSP5N65M/TSF5N65M 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 4.5A,650V,Max.RDS(on)=3.0 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 16nC) minimize on-state resistance, provide superior switching High ruggedness perform

 0.15. Size:255K  inchange semiconductor
 stf45n65m5.pdf

isc N-Channel MOSFET Transistor STF45N65M5 FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

 0.16. Size:211K  inchange semiconductor
 stwa45n65m5.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STWA45N65M5 FEATURES Excellent switching performance Higher V rating DSS 100 % Rg and UIS Tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V D

 0.17. Size:288K  inchange semiconductor
 stp45n65m5.pdf

isc N-Channel MOSFET Transistor STP45N65M5 FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 78m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

 0.18. Size:356K  inchange semiconductor
 stb45n65m5.pdf

isc N-Channel MOSFET Transistor STB45N65M5 FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 78m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

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 stfw45n65m5.pdf

Isc N-Channel MOSFET Transistor STFW45N65M5 FEATURES With To-3PML package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage

 0.20. Size:204K  inchange semiconductor
 stb35n65m5.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor STB35N65M5 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIM