5N65M Datasheet and Replacement

R5N65 5N65F 5N65D 5N65E 5N65M 5N65NS E M I C O N D U C T O R650V N-Channel Power MOSFETFEATURESPRODUCT SUMMARYRDS(ON)

STE145N65M5N-channel 650 V, 0.012 typ., 143 A, MDmesh V Power MOSFET in a ISOTOP packageDatasheet - preliminary dataFeatures Order code VDS @Tjmax RDS(on) max IDSTE145N65M5 710 V 0.015 143 A Very low RDS(on) Higher VDSS rating Higher dv/dt capabilityISOTOP Excellent switching performance 100% avalanche testedApplicationsFigure 1. Internal sch

STFW45N65M5, STW45N65M5, STWA45N65M5N-channel 650 V, 35 A, 0.067 typ., MDmesh V Power MOSFETs in TO-3PF, TO-247 and TO-247 long leads packagesDatasheet - production dataFeatures Order codes VDS @ TJmax RDS(on) max IDSTFW45N65M5STW45N65M5 710 V 0.078 35 A111STWA45N65M5332 21 1 Worldwide best RDS(on) * areaTO-247TO-3PFTO-247 long leads Hig

STL45N65M5N-channel 650 V, 0.075 typ., 22.5 A MDmesh V Power MOSFET in PowerFLAT 8x8 HV packageDatasheet preliminary dataFeaturesVDSS @ RDS(on) Order code IDS(2) Bottom viewTJmax maxS(2)S(2)G(1)STL45N65M5 710 V

STB15N65M5, STD15N65M5DatasheetN-channel 650 V, 0.308 typ., 11 A MDmesh M5 Power MOSFETs in D2PAK and DPAK packagesFeaturesTABTABVDS @RDS(on) max. IDOrder codeTJmax32213STB15N65M51710 V 0.34 11 AD2PAK DPAKSTD15N65M5 Extremely low RDS(on)D(2, TAB) Low gate charge and input capacitance Excellent switching performance 100% aval

STB45N65M5, STF45N65M5, STP45N65M5N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP and TO-220 packagesDatasheet - production dataFeaturesTAB2 Order codes VDSS @ TJmax RDS(on) max ID31STB45N65M532D2PAK1STF45N65M5 710 V 0.078 35 ATO-220FPSTP45N65M5TAB Worldwide best RDS(on) * area Higher VDSS rating and high dv/dt capa

STFW45N65M5, STW45N65M5, STWA45N65M5N-channel 650 V, 35 A, 0.067 typ., MDmesh V Power MOSFETs in TO-3PF, TO-247 and TO-247 long leads packagesDatasheet - production dataFeatures Order codes VDS @ TJmax RDS(on) max IDSTFW45N65M5STW45N65M5 710 V 0.078 35 A111STWA45N65M5332 21 1 Worldwide best RDS(on) * areaTO-247TO-3PFTO-247 long leads Hig

STB35N65M5, STF35N65M5, STI35N65M5STP35N65M5, STW35N65M5N-channel 650 V, 0.085 , 27 A, MDmesh V Power MOSFETin D2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS @ Type RDS(on) max IDTJMAX 33123 12STB35N65M5 710 V

STB45N65M5, STF45N65M5, STP45N65M5 STW45N65M5N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packagesDatasheet production dataFeatures TAB2VDSS @ RDS(on) 3Order code ID1TJmax max32D2PAK1STB45N65M5TO-220FPTABSTF45N65M5710 V

STL15N65M5N-channel 650 V, 0.335 typ., 10 A MDmesh V Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDSS RDS(on) max IDSTL15N65M5 710 V

STY145N65M5N-channel 650 V, 0.012 typ., 138 A, MDmesh V Power MOSFET in Max247 packageDatasheet preliminary dataFeaturesVDSS Order code@TJmax RDS(on) max IDSTY145N65M5 710 V

STB15N65M5, STD15N65M5N-channel 650 V, 0.308 typ., 11 A MDmesh V Power MOSFET in D2PAK and DPAK packagesDatasheet production dataFeaturesVDS @ RDS(on) Order codes IDTJmax maxTABSTB15N65M5TAB710 V

STF15N65M5, STFI15N65M5, STP15N65M5N-channel 650 V, 0.308 typ., 11 A MDmesh V Power MOSFET in TO-220FP, I2PAKFP and TO-220 packagesDatasheet production dataFeaturesVDS @ RDS(on) Order codes IDTJmax max321STF15N65M5TO-220FPSTFI15N65M5 710 V

TSD5N65M/TSU5N65M650V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 3.0A,650V,Max.RDS(on)=3.0 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 16nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and

TSP5N65M/TSF5N65M 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 4.5A,650V,Max.RDS(on)=3.0 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 16nC)minimize on-state resistance, provide superior switching High ruggednessperform

isc N-Channel MOSFET Transistor STF45N65M5FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STWA45N65M5FEATURESExcellent switching performanceHigher V ratingDSS100 % Rg and UIS TestedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VD

isc N-Channel MOSFET Transistor STP45N65M5FEATURESDrain Current : I = 35A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 78m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

isc N-Channel MOSFET Transistor STB45N65M5FEATURESDrain Current : I = 35A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 78m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

Isc N-Channel MOSFET Transistor STFW45N65M5FEATURESWith To-3PML packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

INCHANGE Semiconductorisc N-Channel MOSFET Transistor STB35N65M5FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIM