6N65F Todos los transistores

 ..1. Size:431K  jh
 6n65 6n65f 6n65d.pdf

6N65 JH 650V N-Channel Power MOSFET S E M I C O N D U C T O R FEATURES PRODUCT SUMMARY RDS(ON)

 0.1. Size:276K  cystek
 mtn6n65fp.pdf

Spec. No. C597FP Issued Date 2010.01.28 CYStech Electronics Corp. Revised Date 2012.01.13 Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 1.23 (typ.) MTN6N65FP ID 6A Description The MTN6N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

 0.2. Size:350K  ubiq
 qm06n65f.pdf

QM06N65F 1 2011-04-25 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM06N65F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 1.6 6A most of the synchronous buck converter applications . Applications The QM06N65F meet the RoHS and

 0.3. Size:670K  way-on
 wml36n65f2 wmk36n65f2 wmn36n65f2 wmm36n65f2 wmj36n65f2.pdf

WML36N65F2, WM F2 MK36N65F WMN3 N65F2, WM F2 36N65F2, WMM36N MJ36N65F 650V 0.087 S 0 Super Junction Power MOSFET Descrip ption WMOSTM F2 is Wa 2nd generation super ayon s junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f s S D D G G G S D G SJ-MOSFE while of an extremely fa body ET ffering

 0.4. Size:682K  way-on
 wml26n65f2 wmo26n65f2 wmk26n65f2 wmn26n65f2 wmm26n65f2 wmj26n65f2.pdf

WML2 N65F2, WM F2 26N65F2, WMO26N MK26N65F WMN2 N65F2, WM F2 26N65F2, WMM26N MJ26N65F 650V 0.17 S T V Super Junction Power MOSFET Descrip ption WMOSTM F2 is Wa 2nd generation super ayon s junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f s S D D G G G S D G SJ-MOSFE while of an extremely fa

 0.5. Size:307K  wuxi china
 cs16n65fa9h.pdf

Silicon N-Channel Power MOSFET R CS16N65F A9H VDSS 650 V General Description ID 16 A CS16N65F A9H, the silicon N-channel Enhanced PD(TC=25 ) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 0.6. Size:811K  convert
 cs6n65f cs6n65p cs6n65u cs6n65d.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS6N65F,CS6N65P,CS6N65U,CS6N65D 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS6N65F TO-220F

 0.7. Size:511K  convert
 cs16n65f cs16n65p cs16n65w.pdf

nvert CS16N65F,CS16N65P,CS16N65W Suzhou Convert Semiconductor Co ., Ltd. 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS16N65F TO-220F CS1

 0.8. Size:625K  convert
 cs16n65f.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS16N65F 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS16N65F TO-220F CS16N65F Absolute Max

 0.9. Size:5764K  first semi
 fir6n65fg.pdf

 0.10. Size:439K  cn agmsemi
 agm16n65f.pdf

AGM16N65F General Description Product Summary The AGM16N65F combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery BVDSS RDSON ID for load protection applications. 650V 0.58 16A Features Advance high cell density Trench technology TO-220F Pin Configuration Low R to m

 0.11. Size:1129K  cn hmsemi
 hm16n65f.pdf

HM16N65F VDSS 650 V General Description ID 16 A HM16N65F, the silicon N-channel Enhanced PD(TC=25 ) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.51 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati