Справочник MOSFET. 6N65F

 

6N65F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 6N65F
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 48 W
   Предельно допустимое напряжение сток-исток |Uds|: 650 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 6 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 29 nC
   Время нарастания (tr): 150 ns
   Выходная емкость (Cd): 140 pf
   Сопротивление сток-исток открытого транзистора (Rds): 1.5 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для 6N65F

 

 

6N65F Datasheet (PDF)

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6n65 6n65f 6n65d.pdf

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6N65JH650V N-Channel Power MOSFETS E M I C O N D U C T O RFEATURESPRODUCT SUMMARYRDS(ON)

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mtn6n65fp.pdf

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Spec. No. : C597FP Issued Date : 2010.01.28 CYStech Electronics Corp.Revised Date :2012.01.13 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 1.23 (typ.) MTN6N65FP ID : 6A Description The MTN6N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

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qm06n65f.pdf

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QM06N65F 1 2011-04-25 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM06N65F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 1.6 6Amost of the synchronous buck converterapplications . Applications The QM06N65F meet the RoHS and

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wml36n65f2 wmk36n65f2 wmn36n65f2 wmm36n65f2 wmj36n65f2.pdf

6N65F 6N65F

WML36N65F2, WM F2 MK36N65FWMN3 N65F2, WM F2 36N65F2, WMM36N MJ36N65F 650V 0.087 S0 Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa body ET ffering

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wml26n65f2 wmo26n65f2 wmk26n65f2 wmn26n65f2 wmm26n65f2 wmj26n65f2.pdf

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WML2 N65F2, WM F2 26N65F2, WMO26N MK26N65FWMN2 N65F2, WM F2 26N65F2, WMM26N MJ26N65F 650V 0.17 S TV Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa

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cs16n65fa9h.pdf

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Silicon N-Channel Power MOSFET RCS16N65F A9H VDSS 650 V General Description ID 16 A CS16N65F A9H, the silicon N-channel Enhanced PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

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cs6n65f cs6n65p cs6n65u cs6n65d.pdf

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nvertSuzhou Convert Semiconductor Co ., Ltd.CS6N65F,CS6N65P,CS6N65U,CS6N65D650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS6N65F TO-220F

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cs16n65f cs16n65p cs16n65w.pdf

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nvertCS16N65F,CS16N65P,CS16N65WSuzhou Convert Semiconductor Co ., Ltd.650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS16N65F TO-220F CS1

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cs16n65f.pdf

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nvertSuzhou Convert Semiconductor Co ., Ltd. CS16N65F650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS16N65F TO-220F CS16N65FAbsolute Max

 0.9. Size:1129K  cn hmsemi
hm16n65f.pdf

6N65F 6N65F

HM16N65FVDSS 650 V General Description ID 16 A HM16N65F, the silicon N-channel Enhanced PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.51 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati

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